@inbook{5fc12f59ad1a41f69f17bda5648faf19,
title = "Influence of Post-Ion-Implantation Annealing Temperature on the Characteristics of Gate Oxide on 4H Silicon Carbide",
abstract = "The effect of post-ion implantation annealing on the properties of the SiO2/4H-SiC interface is examined in this paper. It is observed that the surface roughness degrades after the hightemperature Ar annealing, but the oxidation process after the high temperature annealing can improve the surface roughness. To better understand the effect of high-temperature annealing on the gate oxide, the reliability of gate oxide is further studied. The results show that although the surface roughness degrades after high-temperature annealing, the interface state density, tunneling barrier height, breakdown field, and critical electric field for the 10-year lifetime of the thermally grown gate oxide do not degrade.",
keywords = "interface state density, MOS capacitor, Post-ion-implantation annealing, Silicon carbide, SiO/4H-SiC interface, surface roughness, time-dependent dielectric breakdown",
author = "Lin, {Li Jung} and Tsui, {Bing Yue}",
note = "Publisher Copyright: {\textcopyright} 2023 The Author(s). Published by Trans Tech Publications Ltd, Switzerland.",
year = "2023",
doi = "10.4028/p-se77bl",
language = "English",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd.",
pages = "107--111",
booktitle = "Materials Science Forum",
address = "瑞士",
}