Influence of passivation layers on characteristics of high mobility amorphous indium-zinc-tin-oxide thin-film transistors

Po-Tsun Liu, C. H. Chang, G. T. Zheng, C. C. Chang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations

Abstract

We investigated the influence of passivation-layer deposition on the characteristics of a-InZnSnO thin-film transistors (TFTs). The threshold voltage (V th ) of the TFTs shifted markedly as a result of the ion bombardment induced by the passivation layers above. By adjusting the post annealing temperature, the performance of the TFTs can be modulated. The a-InZnSnO TFTs after passivation exhibited good performance with a field-effect mobility of 21.34 cm 2 /Vs, a threshold voltage of-5.03V, and a subthreshold slope of 0.52 V/decade.

Original languageEnglish
Title of host publicationThin Film Transistors 13, TFT 13
EditorsY. Kuo
PublisherElectrochemical Society Inc.
Pages163-168
Number of pages6
Volume75
Edition10
ISBN (Electronic)9781607685395
DOIs
StatePublished - Oct 2016
EventSymposium on Thin Film Transistors 13, TFT 2016 - PRiME 2016/230th ECS Meeting - Honolulu, United States
Duration: 2 Oct 20167 Oct 2016

Publication series

NameECS Transactions
Number10
Volume75
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Conference

ConferenceSymposium on Thin Film Transistors 13, TFT 2016 - PRiME 2016/230th ECS Meeting
Country/TerritoryUnited States
CityHonolulu
Period2/10/167/10/16

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