Influence of hydrogen on the germanium incorporation in a-Si 1-x Ge x :H for thin-film solar cell application

C. M. Wang; Y. T. Huang; K. H. Yen; H. J. Hsu; C. H. Hsu; Hsiao-Wen Zan; C. C. Tsai

doi:10.1557/PROC-1245-A04-02

Influence of hydrogen on the germanium incorporation in a-Si _1-x Ge _x :H for thin-film solar cell application

C. M. Wang, Y. T. Huang, K. H. Yen, H. J. Hsu, C. H. Hsu, Hsiao-Wen Zan, C. C. Tsai

Department of Photonics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

In this work, we examined the Ge incorporation and the accompanied defect formation during PECVD deposition of hydrogenated amorphous silicon-germanium alloys (a-Si _1-x Ge _x :H). In particular, we studied the effect of hydrogen on film growth, defect formation, Ge and Si incorporation efficiencies, and the H-bonding configuration. Our results indicate that hydrogen has a strong effect on improving the a-Si _1-x Ge _x :H film quality and the Ge incorporation in a-Si _1-x Ge _x :H. With adequate hydrogen dilution, the a-Si _1-x Ge _x :H thin-film quality significantly improved. However, excessive hydrogen dilution degraded the film properties. A number of analytical tools were employed, including FTIR, XPS, UV-Visible spectroscopy, photoconductivity, etc. The a-Si _1-x Ge _x :H material having 24% Ge content and a bangap of 1.61ev produced the solar cell with a conversion efficiency of 7.07%.

Original language	English
Title of host publication	Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2010
Pages	85-90
Number of pages	6
DOIs	https://doi.org/10.1557/PROC-1245-A04-02
State	Published - 24 Dec 2010
Event	2010 MRS Spring Meeting - San Francisco, CA, United States Duration: 5 Apr 2010 → 9 Apr 2010

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	1245
ISSN (Print)	0272-9172

Conference

Conference	2010 MRS Spring Meeting
Country/Territory	United States
City	San Francisco, CA
Period	5/04/10 → 9/04/10

Access to Document

10.1557/PROC-1245-A04-02

Cite this

Wang, C. M., Huang, Y. T., Yen, K. H., Hsu, H. J., Hsu, C. H., Zan, H-W., & Tsai, C. C. (2010). Influence of hydrogen on the germanium incorporation in a-Si _1-x Ge _x :H for thin-film solar cell application. In Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2010 (pp. 85-90). (Materials Research Society Symposium Proceedings; Vol. 1245). https://doi.org/10.1557/PROC-1245-A04-02

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title = "Influence of hydrogen on the germanium incorporation in a-Si 1-x Ge x :H for thin-film solar cell application",

abstract = " In this work, we examined the Ge incorporation and the accompanied defect formation during PECVD deposition of hydrogenated amorphous silicon-germanium alloys (a-Si 1-x Ge x :H). In particular, we studied the effect of hydrogen on film growth, defect formation, Ge and Si incorporation efficiencies, and the H-bonding configuration. Our results indicate that hydrogen has a strong effect on improving the a-Si 1-x Ge x :H film quality and the Ge incorporation in a-Si 1-x Ge x :H. With adequate hydrogen dilution, the a-Si 1-x Ge x :H thin-film quality significantly improved. However, excessive hydrogen dilution degraded the film properties. A number of analytical tools were employed, including FTIR, XPS, UV-Visible spectroscopy, photoconductivity, etc. The a-Si 1-x Ge x :H material having 24% Ge content and a bangap of 1.61ev produced the solar cell with a conversion efficiency of 7.07%.",

author = "Wang, {C. M.} and Huang, {Y. T.} and Yen, {K. H.} and Hsu, {H. J.} and Hsu, {C. H.} and Hsiao-Wen Zan and Tsai, {C. C.}",

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language = "English",

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Wang, CM, Huang, YT, Yen, KH, Hsu, HJ, Hsu, CH, Zan, H-W & Tsai, CC 2010, Influence of hydrogen on the germanium incorporation in a-Si _1-x Ge _x :H for thin-film solar cell application. in Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2010. Materials Research Society Symposium Proceedings, vol. 1245, pp. 85-90, 2010 MRS Spring Meeting, San Francisco, CA, United States, 5/04/10. https://doi.org/10.1557/PROC-1245-A04-02

Influence of hydrogen on the germanium incorporation in a-Si _1-x Ge _x :H for thin-film solar cell application. / Wang, C. M.; Huang, Y. T.; Yen, K. H.; Hsu, H. J.; Hsu, C. H.; Zan, Hsiao-Wen; Tsai, C. C.

Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2010. 2010. p. 85-90 (Materials Research Society Symposium Proceedings; Vol. 1245).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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N2 - In this work, we examined the Ge incorporation and the accompanied defect formation during PECVD deposition of hydrogenated amorphous silicon-germanium alloys (a-Si 1-x Ge x :H). In particular, we studied the effect of hydrogen on film growth, defect formation, Ge and Si incorporation efficiencies, and the H-bonding configuration. Our results indicate that hydrogen has a strong effect on improving the a-Si 1-x Ge x :H film quality and the Ge incorporation in a-Si 1-x Ge x :H. With adequate hydrogen dilution, the a-Si 1-x Ge x :H thin-film quality significantly improved. However, excessive hydrogen dilution degraded the film properties. A number of analytical tools were employed, including FTIR, XPS, UV-Visible spectroscopy, photoconductivity, etc. The a-Si 1-x Ge x :H material having 24% Ge content and a bangap of 1.61ev produced the solar cell with a conversion efficiency of 7.07%.

AB - In this work, we examined the Ge incorporation and the accompanied defect formation during PECVD deposition of hydrogenated amorphous silicon-germanium alloys (a-Si 1-x Ge x :H). In particular, we studied the effect of hydrogen on film growth, defect formation, Ge and Si incorporation efficiencies, and the H-bonding configuration. Our results indicate that hydrogen has a strong effect on improving the a-Si 1-x Ge x :H film quality and the Ge incorporation in a-Si 1-x Ge x :H. With adequate hydrogen dilution, the a-Si 1-x Ge x :H thin-film quality significantly improved. However, excessive hydrogen dilution degraded the film properties. A number of analytical tools were employed, including FTIR, XPS, UV-Visible spectroscopy, photoconductivity, etc. The a-Si 1-x Ge x :H material having 24% Ge content and a bangap of 1.61ev produced the solar cell with a conversion efficiency of 7.07%.

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