Influence of hydrogen on the germanium incorporation in a-Si 1-x Ge x :H for thin-film solar cell application

C. M. Wang, Y. T. Huang, K. H. Yen, H. J. Hsu, C. H. Hsu, Hsiao-Wen Zan, C. C. Tsai

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

In this work, we examined the Ge incorporation and the accompanied defect formation during PECVD deposition of hydrogenated amorphous silicon-germanium alloys (a-Si 1-x Ge x :H). In particular, we studied the effect of hydrogen on film growth, defect formation, Ge and Si incorporation efficiencies, and the H-bonding configuration. Our results indicate that hydrogen has a strong effect on improving the a-Si 1-x Ge x :H film quality and the Ge incorporation in a-Si 1-x Ge x :H. With adequate hydrogen dilution, the a-Si 1-x Ge x :H thin-film quality significantly improved. However, excessive hydrogen dilution degraded the film properties. A number of analytical tools were employed, including FTIR, XPS, UV-Visible spectroscopy, photoconductivity, etc. The a-Si 1-x Ge x :H material having 24% Ge content and a bangap of 1.61ev produced the solar cell with a conversion efficiency of 7.07%.

Original languageEnglish
Title of host publicationAmorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2010
Pages85-90
Number of pages6
DOIs
StatePublished - 24 Dec 2010
Event2010 MRS Spring Meeting - San Francisco, CA, United States
Duration: 5 Apr 20109 Apr 2010

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1245
ISSN (Print)0272-9172

Conference

Conference2010 MRS Spring Meeting
Country/TerritoryUnited States
CitySan Francisco, CA
Period5/04/109/04/10

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