@inproceedings{5944521b678b47b6a0d23c58a95bbe46,
title = "Influence of h-BN substrate on the Electrical performance of MoSe2 FETs",
abstract = "The unique physical features and transmission characteristics of two-dimensional materials have been widely recognized by the scientific community and extensively explored in recent years to find an alternative to silicon semiconductors' physical size restrictions. Two-dimensional (2D) materials, such as Molybdenum Diselenide (MoSe2) shows a promising role in the next generation of semiconductor devices for advanced electronics and optoelectronics. In this work, we reported the fabrication of field-effect transistor using mechanically exfoliated Molybdenum Diselenide. To explore the intrinsic behavior of Molybdenum Diselenide, layered hexagonal Boron Nitride (h-BN) was used as a substrate and dielectric. h-BN enhances the electron concentration and reduces the columbic scattering offered by SiO2 interface resultant enhancement in the mobility and On/Off ratio by a factor of ~23 and ~200 times respectively. This study signifies the role of h-BN as a better substrate for two-dimensional material-based FETs.",
keywords = "Enhanced mobility, Field Effect Transistors, MoSe2, Vander Waals structure, h-BN",
author = "Chetan Awasthi and Jian, {Wen Bin} and Islam, {S. S.}",
note = "Publisher Copyright: {\textcopyright} The Electrochemical Society; 1st International Conference on Technologies for Smart Green Connected Society 2021, ICTSGS 2021 ; Conference date: 29-11-2021 Through 30-11-2021",
year = "2022",
doi = "10.1149/10701.15945ecst",
language = "English",
series = "ECS Transactions",
publisher = "Institute of Physics",
number = "1",
pages = "15945--15952",
booktitle = "ECS Transactions",
address = "United Kingdom",
edition = "1",
}