Influence of h-BN substrate on the Electrical performance of MoSe2 FETs

Chetan Awasthi, Wen Bin Jian, S. S. Islam*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The unique physical features and transmission characteristics of two-dimensional materials have been widely recognized by the scientific community and extensively explored in recent years to find an alternative to silicon semiconductors' physical size restrictions. Two-dimensional (2D) materials, such as Molybdenum Diselenide (MoSe2) shows a promising role in the next generation of semiconductor devices for advanced electronics and optoelectronics. In this work, we reported the fabrication of field-effect transistor using mechanically exfoliated Molybdenum Diselenide. To explore the intrinsic behavior of Molybdenum Diselenide, layered hexagonal Boron Nitride (h-BN) was used as a substrate and dielectric. h-BN enhances the electron concentration and reduces the columbic scattering offered by SiO2 interface resultant enhancement in the mobility and On/Off ratio by a factor of ~23 and ~200 times respectively. This study signifies the role of h-BN as a better substrate for two-dimensional material-based FETs.

Original languageEnglish
Title of host publicationECS Transactions
PublisherInstitute of Physics
Pages15945-15952
Number of pages8
Edition1
ISBN (Electronic)9781607685395
DOIs
StatePublished - 2022
Event1st International Conference on Technologies for Smart Green Connected Society 2021, ICTSGS 2021 - Virtual, Online, United States
Duration: 29 Nov 202130 Nov 2021

Publication series

NameECS Transactions
Number1
Volume107
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Conference

Conference1st International Conference on Technologies for Smart Green Connected Society 2021, ICTSGS 2021
Country/TerritoryUnited States
CityVirtual, Online
Period29/11/2130/11/21

Keywords

  • Enhanced mobility
  • Field Effect Transistors
  • MoSe2
  • Vander Waals structure
  • h-BN

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