Influence of channel layer and passivation layer on the stability of amorphous InGaZnO thin film transistors

Runze Zhan; Chengyuan Dong; Po-Tsun Liu; Han Ping D. Shieh

doi:10.1016/j.microrel.2013.05.007

Influence of channel layer and passivation layer on the stability of amorphous InGaZnO thin film transistors

Runze Zhan^*, Chengyuan Dong, Po-Tsun Liu, Han Ping D. Shieh

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Article › peer-review

33 Scopus citations

Abstract

The electrical stability of amorphous InGaZnO (a-IGZO) TFTs with three different channel layers was investigated. Compared with the single channel layer, the a-IGZO TFT with double stacked channel layer showed the lowest threshold voltage shift with slightly change in field effect mobility and sub-threshold swing under positive and negative gate bias stress tests. Moreover, sputtered SiN_x thin film was served as passivation layer where the V_th shift in bias stress effect evidently became less. It was found that the passivated a-IGZO TFT with double stacked channel layer still exhibited the best stability. The results prove that the stability of a-IGZO TFTs can be effectively improved by using double stacked channel layer and passivation layer.

Original language	English
Pages (from-to)	1879-1885
Number of pages	7
Journal	Microelectronics Reliability
Volume	53
Issue number	12
DOIs	https://doi.org/10.1016/j.microrel.2013.05.007
State	Published - Dec 2013

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10.1016/j.microrel.2013.05.007

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title = "Influence of channel layer and passivation layer on the stability of amorphous InGaZnO thin film transistors",

abstract = "The electrical stability of amorphous InGaZnO (a-IGZO) TFTs with three different channel layers was investigated. Compared with the single channel layer, the a-IGZO TFT with double stacked channel layer showed the lowest threshold voltage shift with slightly change in field effect mobility and sub-threshold swing under positive and negative gate bias stress tests. Moreover, sputtered SiNx thin film was served as passivation layer where the Vth shift in bias stress effect evidently became less. It was found that the passivated a-IGZO TFT with double stacked channel layer still exhibited the best stability. The results prove that the stability of a-IGZO TFTs can be effectively improved by using double stacked channel layer and passivation layer.",

author = "Runze Zhan and Chengyuan Dong and Po-Tsun Liu and Shieh, {Han Ping D.}",

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T1 - Influence of channel layer and passivation layer on the stability of amorphous InGaZnO thin film transistors

AU - Zhan, Runze

AU - Dong, Chengyuan

AU - Liu, Po-Tsun

AU - Shieh, Han Ping D.

PY - 2013/12

Y1 - 2013/12

N2 - The electrical stability of amorphous InGaZnO (a-IGZO) TFTs with three different channel layers was investigated. Compared with the single channel layer, the a-IGZO TFT with double stacked channel layer showed the lowest threshold voltage shift with slightly change in field effect mobility and sub-threshold swing under positive and negative gate bias stress tests. Moreover, sputtered SiNx thin film was served as passivation layer where the Vth shift in bias stress effect evidently became less. It was found that the passivated a-IGZO TFT with double stacked channel layer still exhibited the best stability. The results prove that the stability of a-IGZO TFTs can be effectively improved by using double stacked channel layer and passivation layer.

AB - The electrical stability of amorphous InGaZnO (a-IGZO) TFTs with three different channel layers was investigated. Compared with the single channel layer, the a-IGZO TFT with double stacked channel layer showed the lowest threshold voltage shift with slightly change in field effect mobility and sub-threshold swing under positive and negative gate bias stress tests. Moreover, sputtered SiNx thin film was served as passivation layer where the Vth shift in bias stress effect evidently became less. It was found that the passivated a-IGZO TFT with double stacked channel layer still exhibited the best stability. The results prove that the stability of a-IGZO TFTs can be effectively improved by using double stacked channel layer and passivation layer.

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DO - 10.1016/j.microrel.2013.05.007

M3 - Article

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SN - 0026-2714

VL - 53

SP - 1879

EP - 1885

JO - Microelectronics and Reliability

JF - Microelectronics and Reliability

IS - 12

ER -

Influence of channel layer and passivation layer on the stability of amorphous InGaZnO thin film transistors

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