Influence of barrier growth temperature on the properties of InGaN/GaN quantum well

Keyphrases

• Indium Gallium Nitride (InGaN) 100%
• InGaN Quantum Wells 100%
• Growth Temperature 100%
• Photoluminescence 66%
• Well Width 66%
• Blue Shift 33%
• Multiple Quantum Wells 33%
• Band Gap 33%
• Strain Effect 33%
• Peak Wavelength 33%
• Well Thickness 33%
• Double Crystal X-ray Diffraction 33%
• MQW Structure 33%
• Peak Wavelength Shift 33%

Physics

• Quantum Wells 100%
• Photoluminescence 100%
• Blue Shift 50%
• Multiple Quantum Well 50%
• Energy Gaps (Solid State) 50%
• Single Crystal X-Ray Diffraction 50%

Engineering

• Quantum Well 100%
• Growth Temperature 100%
• Ray Diffraction 33%
• Blueshift 33%
• Strain Effect 33%
• Band Gap 33%