@inproceedings{dec2c289e55b4188831afed035ec526e,
title = "Inductorless broadband RF front-end using 2 um GaInP/GaAs HBT technology",
abstract = "A GaInP/GaAs HBT broadband RF front-end consisting of a low noise wideband amplifier and a micromixer is demonstrated in this paper. The major advantage of this work is the elimination of inductors and thus the chip area can be greatly saved. The bandwidth of the RF front-end is up to 7 GHz. The measured conversion gain is higher than 25 dB from 1 GHz to 7 GHz and the noise figure of the RF front-end is less than 8 dB within the bandwidth.",
keywords = "GaInP/GaAs HBT, Gilbert mixer, Micromixer, Wideband amplifier",
author = "Wu, {Tzung Han} and Chin-Chun Meng and Guo-Wei Huang",
year = "2007",
doi = "10.1109/MWSYM.2007.380347",
language = "English",
isbn = "1424406889",
series = "IEEE MTT-S International Microwave Symposium Digest",
pages = "2137--2140",
booktitle = "2007 IEEE MTT-S International Microwave Symposium Digest",
note = "2007 IEEE MTT-S International Microwave Symposium, IMS 2007 ; Conference date: 03-06-2007 Through 08-06-2007",
}