A novel and simple method to suppress the boron penetration in the BF2+-implanted polycrystalline silicon gate is presented by using the inductive-coupling-nitrogen-plasma (ICNP) process. A nitrogen layer was found at the SiO2/Si interface by using this method. The result shows that the sample with the ICNP treatment exhibits a good suppression of boron penetration and improved electrical characteristics.
|Number of pages||2|
|Journal||Applied Physics Letters|
|State||Published - 6 Jan 1997|