Inductive-coupling-nitrogen-plasma process for suppression of boron penetration in BF2+-implanted polycrystalline silicon gate

Tien-Sheng Chao; C. H. Chu

doi:10.1063/1.119304

Inductive-coupling-nitrogen-plasma process for suppression of boron penetration in BF₂⁺-implanted polycrystalline silicon gate

Tien-Sheng Chao^*, C. H. Chu

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

A novel and simple method to suppress the boron penetration in the BF₂⁺-implanted polycrystalline silicon gate is presented by using the inductive-coupling-nitrogen-plasma (ICNP) process. A nitrogen layer was found at the SiO₂/Si interface by using this method. The result shows that the sample with the ICNP treatment exhibits a good suppression of boron penetration and improved electrical characteristics.

Original language	English
Pages (from-to)	55-56
Number of pages	2
Journal	Applied Physics Letters
Volume	70
Issue number	1
DOIs	https://doi.org/10.1063/1.119304
State	Published - 6 Jan 1997

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title = "Inductive-coupling-nitrogen-plasma process for suppression of boron penetration in BF2+-implanted polycrystalline silicon gate",

abstract = "A novel and simple method to suppress the boron penetration in the BF2+-implanted polycrystalline silicon gate is presented by using the inductive-coupling-nitrogen-plasma (ICNP) process. A nitrogen layer was found at the SiO2/Si interface by using this method. The result shows that the sample with the ICNP treatment exhibits a good suppression of boron penetration and improved electrical characteristics.",

author = "Tien-Sheng Chao and Chu, {C. H.}",

year = "1997",

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AU - Chao, Tien-Sheng

AU - Chu, C. H.

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Y1 - 1997/1/6

N2 - A novel and simple method to suppress the boron penetration in the BF2+-implanted polycrystalline silicon gate is presented by using the inductive-coupling-nitrogen-plasma (ICNP) process. A nitrogen layer was found at the SiO2/Si interface by using this method. The result shows that the sample with the ICNP treatment exhibits a good suppression of boron penetration and improved electrical characteristics.

AB - A novel and simple method to suppress the boron penetration in the BF2+-implanted polycrystalline silicon gate is presented by using the inductive-coupling-nitrogen-plasma (ICNP) process. A nitrogen layer was found at the SiO2/Si interface by using this method. The result shows that the sample with the ICNP treatment exhibits a good suppression of boron penetration and improved electrical characteristics.

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JO - Applied Physics Letters

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Inductive-coupling-nitrogen-plasma process for suppression of boron penetration in BF₂⁺-implanted polycrystalline silicon gate

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