Inductive-coupling-nitrogen-plasma process for suppression of boron penetration in BF2+-implanted polycrystalline silicon gate

Tien-Sheng Chao*, C. H. Chu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


A novel and simple method to suppress the boron penetration in the BF2+-implanted polycrystalline silicon gate is presented by using the inductive-coupling-nitrogen-plasma (ICNP) process. A nitrogen layer was found at the SiO2/Si interface by using this method. The result shows that the sample with the ICNP treatment exhibits a good suppression of boron penetration and improved electrical characteristics.

Original languageEnglish
Pages (from-to)55-56
Number of pages2
JournalApplied Physics Letters
Issue number1
StatePublished - 6 Jan 1997


Dive into the research topics of 'Inductive-coupling-nitrogen-plasma process for suppression of boron penetration in BF<sub>2</sub><sup>+</sup>-implanted polycrystalline silicon gate'. Together they form a unique fingerprint.

Cite this