Indium phosphide on silicon heteroepitaxy: Lattice deformation and strain relaxation

D. S. Wuu*, Ray-Hua Horng, M. K. Lee

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

19 Scopus citations

Abstract

Lattice deformation and strain relaxation in epitaxial InP directly on (001) Si are studied as a function of layer thickness using x-ray diffraction and photoluminescence (PL) techniques. The heteroepilayers were grown by low-pressure organometallic vapor-phase epitaxy and showed good quality. We find that mismatch-induced compressive strains are still present in InP layers with a thickness less than 1 μm. The rate of strain release is much lower than the prediction based on the equilibrium theory. With increasing thickness above 1.1 μm, the InP/Si layers suffer in-plane tensile strains as a result of differential thermal contraction during the cooling process after growth. Fairly good agreement is found between the PL and x-ray data for the strain variations in the InP/Si heterostructures.

Original languageEnglish
Pages (from-to)3338-3342
Number of pages5
JournalJournal of Applied Physics
Volume68
Issue number7
DOIs
StatePublished - 1990

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