Indium-gallium-zinc oxide transparent thin-film transistors on the flexible stainless steel foil

Chin Yi Hsu*, Tse Hsien Lee, Pei Yi Kao, Huang-Ming Chen, Huai An Li, Chi Neng Mo, Kevin Chou

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

Abstract

Amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs) were fabricated on the stainless steel (SS) substrate. The surface roughness of stainless steel (SS) substrate was reduced to 0.63 nm after planarization treatment. The mobility of IGZO TFT device was found at 6.45 cm2/Vs with Ion/Ioff ratio >105 at planar state. The mobility of TFT device dropped to 1.23 cm2/Vs at bending state (R =3 cm) but recovered after relaxing to planar state.

Original languageEnglish
StatePublished - 1 Dec 2009
Event2009 International Display Manufacturing Conference, 3D Systems and Applications, and Asia Display, IDMC/3DSA/Asia Display 2009 - Taipei, Taiwan
Duration: 27 Apr 200930 Apr 2009

Conference

Conference2009 International Display Manufacturing Conference, 3D Systems and Applications, and Asia Display, IDMC/3DSA/Asia Display 2009
Country/TerritoryTaiwan
CityTaipei
Period27/04/0930/04/09

Fingerprint

Dive into the research topics of 'Indium-gallium-zinc oxide transparent thin-film transistors on the flexible stainless steel foil'. Together they form a unique fingerprint.

Cite this