Increase in the Efficiency of III-Nitride Micro-LEDs: Atomic-Layer Deposition and Etching

An Chen Liu; Konthoujam James Singh; Yu Ming Huang; Tanveer Ahmed; Fang Jyun Liou; Yu Hau Liou; Chao Cheng Ting; Chien-Chung Lin; Yi-Ming Li; Seiji Samukawa; Hao-Chung Kuo

doi:10.1109/MNANO.2021.3066393

Increase in the Efficiency of III-Nitride Micro-LEDs: Atomic-Layer Deposition and Etching

An Chen Liu, Konthoujam James Singh, Yu Ming Huang, Tanveer Ahmed, Fang Jyun Liou, Yu Hau Liou, Chao Cheng Ting, Chien-Chung Lin, Yi-Ming Li, Seiji Samukawa, Hao-Chung Kuo

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

MICRO-LEDs ( n-LEDs) HAVE been engaged in the next-generation display technology and evolved for various applications from several electronics manufacturers and institutions. The area of n-LEDs (less than 10 # 10 nm2) is desired for the high pixelsper-inch (PPI) value of the microdisplay, but the sidewall effect from the etching process will drop the quantum efficiency

Original language	English
Article number	9398850
Pages (from-to)	18-34
Number of pages	17
Journal	IEEE Nanotechnology Magazine
Volume	15
Issue number	3
DOIs	https://doi.org/10.1109/MNANO.2021.3066393
State	Published - Jun 2021

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@article{b5c1e53a3d944bb6ae0c9934792d1257,

title = "Increase in the Efficiency of III-Nitride Micro-LEDs: Atomic-Layer Deposition and Etching",

abstract = "MICRO-LEDs ( n-LEDs) HAVE been engaged in the next-generation display technology and evolved for various applications from several electronics manufacturers and institutions. The area of n-LEDs (less than 10 # 10 nm2) is desired for the high pixelsper-inch (PPI) value of the microdisplay, but the sidewall effect from the etching process will drop the quantum efficiency ",

author = "Liu, {An Chen} and Singh, {Konthoujam James} and Huang, {Yu Ming} and Tanveer Ahmed and Liou, {Fang Jyun} and Liou, {Yu Hau} and Ting, {Chao Cheng} and Chien-Chung Lin and Yi-Ming Li and Seiji Samukawa and Hao-Chung Kuo",

note = "Publisher Copyright: {\textcopyright} 2007-2011 IEEE.",

year = "2021",

month = jun,

doi = "10.1109/MNANO.2021.3066393",

language = "English",

volume = "15",

pages = "18--34",

journal = "IEEE Nanotechnology Magazine",

issn = "1932-4510",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "3",

}

TY - JOUR

T1 - Increase in the Efficiency of III-Nitride Micro-LEDs

T2 - Atomic-Layer Deposition and Etching

AU - Liu, An Chen

AU - Singh, Konthoujam James

AU - Huang, Yu Ming

AU - Ahmed, Tanveer

AU - Liou, Fang Jyun

AU - Liou, Yu Hau

AU - Ting, Chao Cheng

AU - Lin, Chien-Chung

AU - Li, Yi-Ming

AU - Samukawa, Seiji

AU - Kuo, Hao-Chung

PY - 2021/6

Y1 - 2021/6

N2 - MICRO-LEDs ( n-LEDs) HAVE been engaged in the next-generation display technology and evolved for various applications from several electronics manufacturers and institutions. The area of n-LEDs (less than 10 # 10 nm2) is desired for the high pixelsper-inch (PPI) value of the microdisplay, but the sidewall effect from the etching process will drop the quantum efficiency

AB - MICRO-LEDs ( n-LEDs) HAVE been engaged in the next-generation display technology and evolved for various applications from several electronics manufacturers and institutions. The area of n-LEDs (less than 10 # 10 nm2) is desired for the high pixelsper-inch (PPI) value of the microdisplay, but the sidewall effect from the etching process will drop the quantum efficiency

UR - http://www.scopus.com/inward/record.url?scp=85104190786&partnerID=8YFLogxK

U2 - 10.1109/MNANO.2021.3066393

DO - 10.1109/MNANO.2021.3066393

M3 - Article

AN - SCOPUS:85104190786

SN - 1932-4510

VL - 15

SP - 18

EP - 34

JO - IEEE Nanotechnology Magazine

JF - IEEE Nanotechnology Magazine

IS - 3

M1 - 9398850

ER -

Increase in the Efficiency of III-Nitride Micro-LEDs: Atomic-Layer Deposition and Etching

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