Increase in the Efficiency of III-Nitride Micro-LEDs: Atomic-Layer Deposition and Etching

An Chen Liu, Konthoujam James Singh, Yu Ming Huang, Tanveer Ahmed, Fang Jyun Liou, Yu Hau Liou, Chao Cheng Ting, Chien-Chung Lin, Yi-Ming Li, Seiji Samukawa, Hao-Chung Kuo

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

MICRO-LEDs ( n-LEDs) HAVE been engaged in the next-generation display technology and evolved for various applications from several electronics manufacturers and institutions. The area of n-LEDs (less than 10 # 10 nm2) is desired for the high pixelsper-inch (PPI) value of the microdisplay, but the sidewall effect from the etching process will drop the quantum efficiency

Original languageEnglish
Article number9398850
Pages (from-to)18-34
Number of pages17
JournalIEEE Nanotechnology Magazine
Volume15
Issue number3
DOIs
StatePublished - Jun 2021

Fingerprint

Dive into the research topics of 'Increase in the Efficiency of III-Nitride Micro-LEDs: Atomic-Layer Deposition and Etching'. Together they form a unique fingerprint.

Cite this