@inproceedings{289f1eef8a584bca84b420636fc78eac,
title = "Incorporation of a Simple ESD Circuit in a 650V E-Mode GaN HEMT for All-Terminal ESD Protection",
abstract = "In this paper, a simple circuit is incorporated in a 650V E-mode GaN HEMT process technology to protect all terminals against ESD stress from any direction. Even in the worst case, with the gate subjected to negative ESD pulse with respect to grounded drain, the 650V E-mode HEMT can still pass 5kV HBM.",
keywords = "Electrostatic-Discharge (ESD), High Electron Mobility Transistor (HEMT), Human body Model (HBM), Transmission-Line Pulse (TLP), Two-Dimensional Electron Gas (2D-EG)",
author = "Lee, {Jian Hsing} and Huang, {Yeh Jen} and Hong, {Li Yang} and Chen, {Li Fan} and Jou, {Yeh Ning} and Lin, {Shin Cheng} and Walter Wohlmuth and Liao, {Chih Cherng} and Li, {Ching Ho} and Huang, {Shoa Chang} and Chen, {Ke Horng}",
note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 IEEE International Reliability Physics Symposium, IRPS 2022 ; Conference date: 27-03-2022 Through 31-03-2022",
year = "2022",
doi = "10.1109/IRPS48227.2022.9764596",
language = "English",
series = "IEEE International Reliability Physics Symposium Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "2B31--2B36",
booktitle = "2022 IEEE International Reliability Physics Symposium, IRPS 2022 - Proceedings",
address = "美國",
}