Incorporation of a Simple ESD Circuit in a 650V E-Mode GaN HEMT for All-Terminal ESD Protection

Jian Hsing Lee*, Yeh Jen Huang, Li Yang Hong, Li Fan Chen, Yeh Ning Jou, Shin Cheng Lin, Walter Wohlmuth, Chih Cherng Liao, Ching Ho Li, Shoa Chang Huang, Ke Horng Chen

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

14 Scopus citations

Abstract

In this paper, a simple circuit is incorporated in a 650V E-mode GaN HEMT process technology to protect all terminals against ESD stress from any direction. Even in the worst case, with the gate subjected to negative ESD pulse with respect to grounded drain, the 650V E-mode HEMT can still pass 5kV HBM.

Original languageEnglish
Title of host publication2022 IEEE International Reliability Physics Symposium, IRPS 2022 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2B31-2B36
ISBN (Electronic)9781665479509
DOIs
StatePublished - 2022
Event2022 IEEE International Reliability Physics Symposium, IRPS 2022 - Dallas, United States
Duration: 27 Mar 202231 Mar 2022

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
Volume2022-March
ISSN (Print)1541-7026

Conference

Conference2022 IEEE International Reliability Physics Symposium, IRPS 2022
Country/TerritoryUnited States
CityDallas
Period27/03/2231/03/22

Keywords

  • Electrostatic-Discharge (ESD)
  • High Electron Mobility Transistor (HEMT)
  • Human body Model (HBM)
  • Transmission-Line Pulse (TLP)
  • Two-Dimensional Electron Gas (2D-EG)

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