InAs/GaAs quantum-dot saturable absorbers for diode-pumped passively Q-switched Nd-doped 1.3-μm lasers

H. C. Lai; A. Li; Kuan-Wei Su; M. L. Ku; Yung-Fu Chen; Kai-Feng Huang

doi:10.1364/OL.30.000480

InAs/GaAs quantum-dot saturable absorbers for diode-pumped passively Q-switched Nd-doped 1.3-μm lasers

H. C. Lai, A. Li, Kuan-Wei Su, M. L. Ku, Yung-Fu Chen, Kai-Feng Huang

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

A low-loss semiconductor saturable absorber based on InAs/GaAs quantum dots was developed for Q switching of a diode-pumped Nd-doped laser operating at 1.3 μn. With an InAs/GaAs quantum-dot saturable absorber, a diode-pumped Nd'YVO₄ laser at 1342 nm was achieved. With an incident pump power of 2.2 W, an average output power of 360 m W with a Q-switched pulse width of 90 ns at a pulse repetition rate of 770 kHz was obtained.

Original language	English
Pages (from-to)	480-482
Number of pages	3
Journal	Optics Letters
Volume	30
Issue number	5
DOIs	https://doi.org/10.1364/OL.30.000480
State	Published - 1 Mar 2005

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abstract = "A low-loss semiconductor saturable absorber based on InAs/GaAs quantum dots was developed for Q switching of a diode-pumped Nd-doped laser operating at 1.3 μn. With an InAs/GaAs quantum-dot saturable absorber, a diode-pumped Nd'YVO4 laser at 1342 nm was achieved. With an incident pump power of 2.2 W, an average output power of 360 m W with a Q-switched pulse width of 90 ns at a pulse repetition rate of 770 kHz was obtained.",

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AU - Lai, H. C.

AU - Li, A.

AU - Su, Kuan-Wei

AU - Ku, M. L.

AU - Chen, Yung-Fu

AU - Huang, Kai-Feng

PY - 2005/3/1

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N2 - A low-loss semiconductor saturable absorber based on InAs/GaAs quantum dots was developed for Q switching of a diode-pumped Nd-doped laser operating at 1.3 μn. With an InAs/GaAs quantum-dot saturable absorber, a diode-pumped Nd'YVO4 laser at 1342 nm was achieved. With an incident pump power of 2.2 W, an average output power of 360 m W with a Q-switched pulse width of 90 ns at a pulse repetition rate of 770 kHz was obtained.

AB - A low-loss semiconductor saturable absorber based on InAs/GaAs quantum dots was developed for Q switching of a diode-pumped Nd-doped laser operating at 1.3 μn. With an InAs/GaAs quantum-dot saturable absorber, a diode-pumped Nd'YVO4 laser at 1342 nm was achieved. With an incident pump power of 2.2 W, an average output power of 360 m W with a Q-switched pulse width of 90 ns at a pulse repetition rate of 770 kHz was obtained.

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IS - 5

ER -

InAs/GaAs quantum-dot saturable absorbers for diode-pumped passively Q-switched Nd-doped 1.3-μm lasers

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