InAs-channel metal-oxide-semiconductor HEMTs with atomic-layer-deposited Al₂O₃ Gate Dielectric

N-type metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) devices with an InAs-channel using atomic-layer-deposited (ALD) Al₂O₃ as a gate dielectric have been fabricated and characterized. The device performances of a set of scaled transistors with and without high- k gate dielectric Al₂O₃ have been compared to determine the optimum device structure for low power and high speed applications. The measurement results revealed that the high performance InAs-channel MOS-HEMTs with the ALD Al₂O₃ gate dielectric can be achieved if the structure is designed properly.