In-situ studies of the crystallization of amorphous CoSi2 films

David A. Smith; King-Ning Tu; B. Z. Weiss

doi:10.1016/0304-3991(89)90176-9

In-situ studies of the crystallization of amorphous CoSi₂ films

David A. Smith^*, King-Ning Tu, B. Z. Weiss

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

The crystallization of amorphous CoSi₂ is an ideal phase transformation for in-situ studies. This system satisfies the assumptions underlying the Johnson-Mehl-Avrami analysis rather well and produces a microstructure which can be modelled realistically. The nucleation rate can be measured independently of the growth rate. The activation energy for growth is found to be 1.1 eV/atom and microstructural observations suggest that the interface between amorphous and crystalline material is likely to advance by a ledge mechanism.

Original language	English
Pages (from-to)	90-96
Number of pages	7
Journal	Ultramicroscopy
Volume	30
Issue number	1-2
DOIs	https://doi.org/10.1016/0304-3991(89)90176-9
State	Published - 1 Jan 1989

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abstract = "The crystallization of amorphous CoSi2 is an ideal phase transformation for in-situ studies. This system satisfies the assumptions underlying the Johnson-Mehl-Avrami analysis rather well and produces a microstructure which can be modelled realistically. The nucleation rate can be measured independently of the growth rate. The activation energy for growth is found to be 1.1 eV/atom and microstructural observations suggest that the interface between amorphous and crystalline material is likely to advance by a ledge mechanism.",

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N2 - The crystallization of amorphous CoSi2 is an ideal phase transformation for in-situ studies. This system satisfies the assumptions underlying the Johnson-Mehl-Avrami analysis rather well and produces a microstructure which can be modelled realistically. The nucleation rate can be measured independently of the growth rate. The activation energy for growth is found to be 1.1 eV/atom and microstructural observations suggest that the interface between amorphous and crystalline material is likely to advance by a ledge mechanism.

AB - The crystallization of amorphous CoSi2 is an ideal phase transformation for in-situ studies. This system satisfies the assumptions underlying the Johnson-Mehl-Avrami analysis rather well and produces a microstructure which can be modelled realistically. The nucleation rate can be measured independently of the growth rate. The activation energy for growth is found to be 1.1 eV/atom and microstructural observations suggest that the interface between amorphous and crystalline material is likely to advance by a ledge mechanism.

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ER -

In-situ studies of the crystallization of amorphous CoSi₂ films

Abstract

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