Improving the RF performance of 0.18 μm CMOS with deep n-well implantation

Jiong Guang Su*, Heng Ming Hsu, Shyh Chyi Wong, Chun Yen Chang, Tiao Yuan Huang, Jack Yuan Chen Sun

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

28 Scopus citations


The radio-frequency (RF) figures of merit of 0.18 μm complementary metal-oxide-semiconductor (CMOS) technology are investigated by evaluating the unity-current-gain cutoff frequency (F t) and maximum oscillation frequency (F max). The device fabricated with an added deep n-well structure is shown to greatly enhance both the cutoff frequency and the maximum oscillation frequency, with negligible de disturbance. Specifically, 18% increase in F t and 25% increase in F max are achieved. Since the deep n-well implant can be easily adopted in a standard CMOS process, the approach appears to be very promising for future CMOS RF applications.

Original languageEnglish
Pages (from-to)481-483
Number of pages3
JournalIEEE Electron Device Letters
Issue number10
StatePublished - Oct 2001


  • CMOS
  • Deep n-well
  • Maximum oscillation frequency
  • Radio-frequency
  • Unity-current-gain cutoff frequency


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