Improving the Performance of ZnO Thin-Film Transistors with ZnON Source/Drain Contacts

Chin I. Kuan; Horng-Chih Lin; Pei-Wen Li

doi:10.1109/TED.2017.2704440

Improving the Performance of ZnO Thin-Film Transistors with ZnON Source/Drain Contacts

Chin I. Kuan, Horng-Chih Lin^*, Pei-Wen Li

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Motivation to study the ZnO channel for thin-film transistors (TFTs) is strong in light of its decent high mobility and large bandgap, enabling simultaneous coexistence of high on current and low off-state leakage. Nevertheless, the improvement in device performance for ZnO TFTs has not been fully exercised and even the field-effect mobility (μFE) is degraded with downscaling the channel length owing to considerable series source/drain (S/D) resistance (RSD). In this paper, we show that inserting a thin contact layer of ZnON between the ZnO channel and Al S/D effectively suppresses the formation of interfacial layer of AlO_x and thereby reduces RSD dramatically. This is evidenced by a significant reduction in R SD from 30.1 to 14.4 Ω μ m measured on 0.5-μ m ZnO TFTs with a ZnON contact layer or not, leading to an improvement in μ FE from 18.2 to 29.6 cm 2 Vs $.

Original language	English
Article number	7934028
Pages (from-to)	2849-2853
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	64
Issue number	7
DOIs	https://doi.org/10.1109/TED.2017.2704440
State	Published - 1 Jul 2017

Keywords

Oxide semiconductors
ZnO
ZnON
series source/drain (S/D) resistance
thin-film transistors (TFTs)

Access to Document

10.1109/TED.2017.2704440

Cite this

@article{2f38804cb3384450bd0fed05a65ea0ef,

title = "Improving the Performance of ZnO Thin-Film Transistors with ZnON Source/Drain Contacts",

abstract = "Motivation to study the ZnO channel for thin-film transistors (TFTs) is strong in light of its decent high mobility and large bandgap, enabling simultaneous coexistence of high on current and low off-state leakage. Nevertheless, the improvement in device performance for ZnO TFTs has not been fully exercised and even the field-effect mobility (μFE) is degraded with downscaling the channel length owing to considerable series source/drain (S/D) resistance (RSD). In this paper, we show that inserting a thin contact layer of ZnON between the ZnO channel and Al S/D effectively suppresses the formation of interfacial layer of AlOx and thereby reduces RSD dramatically. This is evidenced by a significant reduction in R SD from 30.1 to 14.4 Ω μ m measured on 0.5-μ m ZnO TFTs with a ZnON contact layer or not, leading to an improvement in μ FE from 18.2 to 29.6 cm 2 Vs $.",

keywords = "Oxide semiconductors, ZnO, ZnON, series source/drain (S/D) resistance, thin-film transistors (TFTs)",

author = "Kuan, {Chin I.} and Horng-Chih Lin and Pei-Wen Li",

year = "2017",

month = jul,

day = "1",

doi = "10.1109/TED.2017.2704440",

language = "English",

volume = "64",

pages = "2849--2853",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC",

number = "7",

}

TY - JOUR

T1 - Improving the Performance of ZnO Thin-Film Transistors with ZnON Source/Drain Contacts

AU - Kuan, Chin I.

AU - Lin, Horng-Chih

AU - Li, Pei-Wen

PY - 2017/7/1

Y1 - 2017/7/1

N2 - Motivation to study the ZnO channel for thin-film transistors (TFTs) is strong in light of its decent high mobility and large bandgap, enabling simultaneous coexistence of high on current and low off-state leakage. Nevertheless, the improvement in device performance for ZnO TFTs has not been fully exercised and even the field-effect mobility (μFE) is degraded with downscaling the channel length owing to considerable series source/drain (S/D) resistance (RSD). In this paper, we show that inserting a thin contact layer of ZnON between the ZnO channel and Al S/D effectively suppresses the formation of interfacial layer of AlOx and thereby reduces RSD dramatically. This is evidenced by a significant reduction in R SD from 30.1 to 14.4 Ω μ m measured on 0.5-μ m ZnO TFTs with a ZnON contact layer or not, leading to an improvement in μ FE from 18.2 to 29.6 cm 2 Vs $.

AB - Motivation to study the ZnO channel for thin-film transistors (TFTs) is strong in light of its decent high mobility and large bandgap, enabling simultaneous coexistence of high on current and low off-state leakage. Nevertheless, the improvement in device performance for ZnO TFTs has not been fully exercised and even the field-effect mobility (μFE) is degraded with downscaling the channel length owing to considerable series source/drain (S/D) resistance (RSD). In this paper, we show that inserting a thin contact layer of ZnON between the ZnO channel and Al S/D effectively suppresses the formation of interfacial layer of AlOx and thereby reduces RSD dramatically. This is evidenced by a significant reduction in R SD from 30.1 to 14.4 Ω μ m measured on 0.5-μ m ZnO TFTs with a ZnON contact layer or not, leading to an improvement in μ FE from 18.2 to 29.6 cm 2 Vs $.

KW - Oxide semiconductors

KW - ZnO

KW - ZnON

KW - series source/drain (S/D) resistance

KW - thin-film transistors (TFTs)

UR - http://www.scopus.com/inward/record.url?scp=85020077656&partnerID=8YFLogxK

U2 - 10.1109/TED.2017.2704440

DO - 10.1109/TED.2017.2704440

M3 - Article

AN - SCOPUS:85020077656

SN - 0018-9383

VL - 64

SP - 2849

EP - 2853

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 7

M1 - 7934028

ER -

Improving the Performance of ZnO Thin-Film Transistors with ZnON Source/Drain Contacts

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this