Improving the Electrical Performance of a Quantum Well FET with a Shell Doping Profile by Heterojunction Optimization

Keyphrases

• Affinity Constant 50%
• Band Gap 50%
• Core-shell Configuration 50%
• Core-shell Heterostructure 50%
• Dielectric Constant 50%
• Doping Profile 100%
• Electrical Performance 100%
• Electron Affinity 50%
• Energy Barrier 50%
• Heterojunction 100%
• High Dielectric Constant 50%
• Leakage Current 50%
• Low Power Applications 50%
• Material Combination 50%
• Material Properties 50%
• Nanowire Heterojunction 50%
• Numerical Simulation 50%
• NWFET 50%
• Off-state Current 50%
• On-state Current 50%
• P-type 50%
• Parameter Analysis 50%
• Physical Insights 50%
• Quantum Well 100%
• Semiconductor Materials 50%
• SiGe 50%
• Subthreshold Swing 50%
• Transistor 50%
• Valence Band Offset 50%

Engineering

• Band Gap 33%
• Band Offset 33%
• Computer Simulation 33%
• Core-Shell 66%
• Dielectrics 33%
• Electrical Performance 100%
• Energy Barrier 33%
• Field Effect Transistor 100%
• Heterojunctions 100%
• High Dielectric Constant 33%
• Material Combination 33%
• Nanowire 33%
• Optimum Condition 33%
• Quantum Well 100%
• Semiconductor Material 33%
• Valence Band 33%

Material Science

• Band Offset 33%
• Field Effect Transistor 100%
• Heterojunction 100%
• Materials Property 33%
• Nanowire 33%
• Permittivity 66%
• Quantum Well 100%
• Semiconductor Material 33%
• Transistor 33%