TY - JOUR
T1 - Improving Safe-Operating-Area of a 5-V n-Channel Large Array MOSFET in a 0.15-μ m BCD Process
AU - Nidhi, Karuna
AU - Ker, Ming-Dou
AU - Lin, Tingyou
AU - Lee, Jian Hsing
PY - 2018/7/1
Y1 - 2018/7/1
N2 - The safe-operating-area (SOA) of large array device (LAD) is one of the most important factors affecting the device reliability. In this paper, the improvement of the electrical-SOA (E-SOA) and the thermal-SOA (T-SOA) by using an optional implantation layer for 5-V n-channel large array MOSFET has been investigated in a 0.15-μm bipolar-CMOS-DMOS process. Experimental results showed that the secondary breakdown current (It2) is improved by 5 times, and a significant improvement is also observed in the E-SOA and the T-SOA boundary as compared to the original device. In addition, the impact of inserting additional layout pick-ups into themultiple-finger layout of large array MOSFET to the E-SOA, It2, and trigger voltage is also practically investigated in silicon for the LAD with a total width of 12 000 μm.
AB - The safe-operating-area (SOA) of large array device (LAD) is one of the most important factors affecting the device reliability. In this paper, the improvement of the electrical-SOA (E-SOA) and the thermal-SOA (T-SOA) by using an optional implantation layer for 5-V n-channel large array MOSFET has been investigated in a 0.15-μm bipolar-CMOS-DMOS process. Experimental results showed that the secondary breakdown current (It2) is improved by 5 times, and a significant improvement is also observed in the E-SOA and the T-SOA boundary as compared to the original device. In addition, the impact of inserting additional layout pick-ups into themultiple-finger layout of large array MOSFET to the E-SOA, It2, and trigger voltage is also practically investigated in silicon for the LAD with a total width of 12 000 μm.
KW - Electrical-SOA (E-SOA)
KW - large array device (LAD)
KW - safe-operating-area (SOA)
KW - thermal-SOA (T-SOA)
KW - transmission line pulsing (TLP)
UR - http://www.scopus.com/inward/record.url?scp=85047787863&partnerID=8YFLogxK
U2 - 10.1109/TED.2018.2838545
DO - 10.1109/TED.2018.2838545
M3 - Article
AN - SCOPUS:85047787863
SN - 0018-9383
VL - 65
SP - 2948
EP - 2956
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 7
ER -