Improving photoluminescence of highly strained 1.32 μm GaAsSb/GaAs multiple quantum wells grown on misorientation substrate

Cheng Tien Wan; Yan Kuin Su; Ricky W. Chuang; Chun Yuan Huang; Yi Sin Wang; Wei Cheng Chen; Hsin-Chieh Yu

doi:10.1016/j.jcrysgro.2008.07.113

Improving photoluminescence of highly strained 1.32 μm GaAsSb/GaAs multiple quantum wells grown on misorientation substrate

Cheng Tien Wan, Yan Kuin Su^*, Ricky W. Chuang, Chun Yuan Huang, Yi Sin Wang, Wei Cheng Chen, Hsin-Chieh Yu

^*Corresponding author for this work

Institute of Lighting and Energy Photonics

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

The (1 0 0) GaAs substrates with misorientations of 0°, 2°, 6°, and 15° toward [0 1 1] were used in this study to improve the crystal quality and optical properties of GaAsSb/GaAs quantum wells (QWs) grown by metalorganic vapor phase epitaxy (MOVPE). The 15° off sample possesses the lowest Sb content of the GaAsSb epi-layer, which thereby means the epitaxy has smaller Sb distribution coefficient. The comparison of photoluminescence (PL) spectra also exhibit that the 15° off sample is with stronger PL intensity and without peak shifting and spectral width broadening. These phenomena show that the crystal quality has been greatly improved by growing GaAsSb/GaAs QW structures on misorientation substrates. Crown

Original language	English
Pages (from-to)	4854-4857
Number of pages	4
Journal	Journal of Crystal Growth
Volume	310
Issue number	23
DOIs	https://doi.org/10.1016/j.jcrysgro.2008.07.113
State	Published - 15 Nov 2008

Keywords

A3. Metalorganic vapor phase epitaxy
A3. Quantum well
B1. Antimonides
B2. Semiconducting ternary compounds

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10.1016/j.jcrysgro.2008.07.113

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@article{f0e4e7f19bcb48199e23ede378ce79b2,

title = "Improving photoluminescence of highly strained 1.32 μm GaAsSb/GaAs multiple quantum wells grown on misorientation substrate",

abstract = "The (1 0 0) GaAs substrates with misorientations of 0°, 2°, 6°, and 15° toward [0 1 1] were used in this study to improve the crystal quality and optical properties of GaAsSb/GaAs quantum wells (QWs) grown by metalorganic vapor phase epitaxy (MOVPE). The 15° off sample possesses the lowest Sb content of the GaAsSb epi-layer, which thereby means the epitaxy has smaller Sb distribution coefficient. The comparison of photoluminescence (PL) spectra also exhibit that the 15° off sample is with stronger PL intensity and without peak shifting and spectral width broadening. These phenomena show that the crystal quality has been greatly improved by growing GaAsSb/GaAs QW structures on misorientation substrates. Crown",

keywords = "A3. Metalorganic vapor phase epitaxy, A3. Quantum well, B1. Antimonides, B2. Semiconducting ternary compounds",

author = "Wan, {Cheng Tien} and Su, {Yan Kuin} and Chuang, {Ricky W.} and Huang, {Chun Yuan} and Wang, {Yi Sin} and Chen, {Wei Cheng} and Hsin-Chieh Yu",

year = "2008",

month = nov,

day = "15",

doi = "10.1016/j.jcrysgro.2008.07.113",

language = "English",

volume = "310",

pages = "4854--4857",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "23",

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T1 - Improving photoluminescence of highly strained 1.32 μm GaAsSb/GaAs multiple quantum wells grown on misorientation substrate

AU - Wan, Cheng Tien

AU - Su, Yan Kuin

AU - Chuang, Ricky W.

AU - Huang, Chun Yuan

AU - Wang, Yi Sin

AU - Chen, Wei Cheng

AU - Yu, Hsin-Chieh

PY - 2008/11/15

Y1 - 2008/11/15

N2 - The (1 0 0) GaAs substrates with misorientations of 0°, 2°, 6°, and 15° toward [0 1 1] were used in this study to improve the crystal quality and optical properties of GaAsSb/GaAs quantum wells (QWs) grown by metalorganic vapor phase epitaxy (MOVPE). The 15° off sample possesses the lowest Sb content of the GaAsSb epi-layer, which thereby means the epitaxy has smaller Sb distribution coefficient. The comparison of photoluminescence (PL) spectra also exhibit that the 15° off sample is with stronger PL intensity and without peak shifting and spectral width broadening. These phenomena show that the crystal quality has been greatly improved by growing GaAsSb/GaAs QW structures on misorientation substrates. Crown

AB - The (1 0 0) GaAs substrates with misorientations of 0°, 2°, 6°, and 15° toward [0 1 1] were used in this study to improve the crystal quality and optical properties of GaAsSb/GaAs quantum wells (QWs) grown by metalorganic vapor phase epitaxy (MOVPE). The 15° off sample possesses the lowest Sb content of the GaAsSb epi-layer, which thereby means the epitaxy has smaller Sb distribution coefficient. The comparison of photoluminescence (PL) spectra also exhibit that the 15° off sample is with stronger PL intensity and without peak shifting and spectral width broadening. These phenomena show that the crystal quality has been greatly improved by growing GaAsSb/GaAs QW structures on misorientation substrates. Crown

KW - A3. Metalorganic vapor phase epitaxy

KW - A3. Quantum well

KW - B1. Antimonides

KW - B2. Semiconducting ternary compounds

UR - http://www.scopus.com/inward/record.url?scp=56249142723&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2008.07.113

DO - 10.1016/j.jcrysgro.2008.07.113

M3 - Article

AN - SCOPUS:56249142723

SN - 0022-0248

VL - 310

SP - 4854

EP - 4857

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 23

ER -

Improving photoluminescence of highly strained 1.32 μm GaAsSb/GaAs multiple quantum wells grown on misorientation substrate

Abstract

Keywords

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