Improving Photoelectric Energy Conversion by structuring Si Surfaces with Ge Quantum Dots

Volodymyr Shmid; Vasyl Kuryliuk; Andriy Nadtochiy; Oleg Korotchenkov; Pei Wen Li

doi:10.1109/ELNANO.2019.8783352

Improving Photoelectric Energy Conversion by structuring Si Surfaces with Ge Quantum Dots

Volodymyr Shmid, Vasyl Kuryliuk, Andriy Nadtochiy, Oleg Korotchenkov, Pei Wen Li

Institute of Electronics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Structuring Si surfaces with Ge quantum dots can have a beneficial effect on the photovoltage (PV), increasing the PV magnitude and decay time. The origin of this behavior is intimately related to mechanical strains developed in the vicinity of the Ge/Si interface. The structuring is a promising means of avoiding the uncontrolled production of recombination centers and offering significant enhancement of the recombination lifetime due to carrier trapping in the dots. This work can open new opportunities for advanced photoelectric devices with recombination center free nanostructures.

Original language	English
Title of host publication	2019 IEEE 39th International Conference on Electronics and Nanotechnology, ELNANO 2019 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	92-96
Number of pages	5
ISBN (Electronic)	9781728120652
DOIs	https://doi.org/10.1109/ELNANO.2019.8783352
State	Published - Apr 2019
Event	39th IEEE International Conference on Electronics and Nanotechnology, ELNANO 2019 - Kyiv, Ukraine Duration: 16 Apr 2019 → 18 Apr 2019

Publication series

Name	2019 IEEE 39th International Conference on Electronics and Nanotechnology, ELNANO 2019 - Proceedings

Conference

Conference	39th IEEE International Conference on Electronics and Nanotechnology, ELNANO 2019
Country/Territory	Ukraine
City	Kyiv
Period	16/04/19 → 18/04/19

Keywords

carrier separation
carrier trapping
decay time
photovoltage
SiGe

Access to Document

10.1109/ELNANO.2019.8783352

Cite this

Shmid, V., Kuryliuk, V., Nadtochiy, A., Korotchenkov, O., & Li, P. W. (2019). Improving Photoelectric Energy Conversion by structuring Si Surfaces with Ge Quantum Dots. In 2019 IEEE 39th International Conference on Electronics and Nanotechnology, ELNANO 2019 - Proceedings (pp. 92-96). Article 8783352 (2019 IEEE 39th International Conference on Electronics and Nanotechnology, ELNANO 2019 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ELNANO.2019.8783352

Shmid, Volodymyr ; Kuryliuk, Vasyl ; Nadtochiy, Andriy et al. / Improving Photoelectric Energy Conversion by structuring Si Surfaces with Ge Quantum Dots. 2019 IEEE 39th International Conference on Electronics and Nanotechnology, ELNANO 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2019. pp. 92-96 (2019 IEEE 39th International Conference on Electronics and Nanotechnology, ELNANO 2019 - Proceedings).

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abstract = "Structuring Si surfaces with Ge quantum dots can have a beneficial effect on the photovoltage (PV), increasing the PV magnitude and decay time. The origin of this behavior is intimately related to mechanical strains developed in the vicinity of the Ge/Si interface. The structuring is a promising means of avoiding the uncontrolled production of recombination centers and offering significant enhancement of the recombination lifetime due to carrier trapping in the dots. This work can open new opportunities for advanced photoelectric devices with recombination center free nanostructures.",

keywords = "carrier separation, carrier trapping, decay time, photovoltage, SiGe",

author = "Volodymyr Shmid and Vasyl Kuryliuk and Andriy Nadtochiy and Oleg Korotchenkov and Li, {Pei Wen}",

year = "2019",

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doi = "10.1109/ELNANO.2019.8783352",

language = "English",

series = "2019 IEEE 39th International Conference on Electronics and Nanotechnology, ELNANO 2019 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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booktitle = "2019 IEEE 39th International Conference on Electronics and Nanotechnology, ELNANO 2019 - Proceedings",

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note = "39th IEEE International Conference on Electronics and Nanotechnology, ELNANO 2019 ; Conference date: 16-04-2019 Through 18-04-2019",

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Shmid, V, Kuryliuk, V, Nadtochiy, A, Korotchenkov, O & Li, PW 2019, Improving Photoelectric Energy Conversion by structuring Si Surfaces with Ge Quantum Dots. in 2019 IEEE 39th International Conference on Electronics and Nanotechnology, ELNANO 2019 - Proceedings., 8783352, 2019 IEEE 39th International Conference on Electronics and Nanotechnology, ELNANO 2019 - Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 92-96, 39th IEEE International Conference on Electronics and Nanotechnology, ELNANO 2019, Kyiv, Ukraine, 16/04/19. https://doi.org/10.1109/ELNANO.2019.8783352

Improving Photoelectric Energy Conversion by structuring Si Surfaces with Ge Quantum Dots. / Shmid, Volodymyr; Kuryliuk, Vasyl; Nadtochiy, Andriy et al.
2019 IEEE 39th International Conference on Electronics and Nanotechnology, ELNANO 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2019. p. 92-96 8783352 (2019 IEEE 39th International Conference on Electronics and Nanotechnology, ELNANO 2019 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Li, Pei Wen

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Shmid V, Kuryliuk V, Nadtochiy A, Korotchenkov O, Li PW. Improving Photoelectric Energy Conversion by structuring Si Surfaces with Ge Quantum Dots. In 2019 IEEE 39th International Conference on Electronics and Nanotechnology, ELNANO 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2019. p. 92-96. 8783352. (2019 IEEE 39th International Conference on Electronics and Nanotechnology, ELNANO 2019 - Proceedings). doi: 10.1109/ELNANO.2019.8783352

Improving Photoelectric Energy Conversion by structuring Si Surfaces with Ge Quantum Dots

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Keywords

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