Skip to main navigation Skip to search Skip to main content

Improving Performance and Breakdown Voltage in Normally-Off GaN Recessed Gate MIS-HEMTs Using Atomic Layer Etching and Gate Field Plate for High-Power Device Applications

  • An Chen Liu
  • , Po Tsung Tu
  • , Hsin Chu Chen*
  • , Yung Yu Lai
  • , Po Chun Yeh
  • , Hao Chung Kuo*
    • *Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

31 Scopus citations

Fingerprint

Dive into the research topics of 'Improving Performance and Breakdown Voltage in Normally-Off GaN Recessed Gate MIS-HEMTs Using Atomic Layer Etching and Gate Field Plate for High-Power Device Applications'. Together they form a unique fingerprint.
Sort by

Keyphrases

Engineering

Material Science