Improving light output power of the GaN-Based vertical-injection light-emitting diodes by Mg+ implanted current blocking layer

Min An Tsai; Peichen Yu; J. R. Chen; J. K. Huang; C. H. Chiu; Hao-Chung Kuo; Tien-chang Lu; Shiuan-Huei Lin; S. C. Wang

doi:10.1109/LPT.2009.2016431

Improving light output power of the GaN-Based vertical-injection light-emitting diodes by Mg⁺ implanted current blocking layer

Min An Tsai^*, Peichen Yu, J. R. Chen, J. K. Huang, C. H. Chiu, Hao-Chung Kuo, Tien-chang Lu, Shiuan-Huei Lin, S. C. Wang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

27 Scopus citations

Abstract

A method for forming a current blocking layer (CBL) by ion implantation in GaN-based vertical-injection light-emitting diodes (VI-LEDs) was proposed. It was found that the use of CBL in VI-LEDs can effectively reduce the current crowding effect and enhance the light output power. The uniform emission intensity distribution of VI-LEDs with CBL was demonstrated by electroluminescence measurements. Experimental results show that the wall-plug efficiency was enhanced by 12.3% at an injection current of 20 mA, compared to that of VI-LEDs without CBL, and by 56.2% compared to that of conventional LEDs. The device simulation results reveal that the current path can be blocked by CBL, resulting in high light extraction efficiencies and large current densities within the effective emission region of active layers.

Original language	English
Pages (from-to)	688-690
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	21
Issue number	11
DOIs	https://doi.org/10.1109/LPT.2009.2016431
State	Published - 1 Jun 2009

Keywords

Current blocking layer (CBL)
Current crowding
GaN
Ion implantation
Vertical-injection light-emitting diodes VILEDs)
Wall-plug efficiency (WPE)

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10.1109/LPT.2009.2016431

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title = "Improving light output power of the GaN-Based vertical-injection light-emitting diodes by Mg+ implanted current blocking layer",

abstract = "A method for forming a current blocking layer (CBL) by ion implantation in GaN-based vertical-injection light-emitting diodes (VI-LEDs) was proposed. It was found that the use of CBL in VI-LEDs can effectively reduce the current crowding effect and enhance the light output power. The uniform emission intensity distribution of VI-LEDs with CBL was demonstrated by electroluminescence measurements. Experimental results show that the wall-plug efficiency was enhanced by 12.3% at an injection current of 20 mA, compared to that of VI-LEDs without CBL, and by 56.2% compared to that of conventional LEDs. The device simulation results reveal that the current path can be blocked by CBL, resulting in high light extraction efficiencies and large current densities within the effective emission region of active layers.",

keywords = "Current blocking layer (CBL), Current crowding, GaN, Ion implantation, Vertical-injection light-emitting diodes VILEDs), Wall-plug efficiency (WPE)",

author = "Tsai, {Min An} and Peichen Yu and Chen, {J. R.} and Huang, {J. K.} and Chiu, {C. H.} and Hao-Chung Kuo and Tien-chang Lu and Shiuan-Huei Lin and Wang, {S. C.}",

year = "2009",

month = jun,

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doi = "10.1109/LPT.2009.2016431",

language = "English",

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journal = "IEEE Photonics Technology Letters",

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T1 - Improving light output power of the GaN-Based vertical-injection light-emitting diodes by Mg+ implanted current blocking layer

AU - Tsai, Min An

AU - Yu, Peichen

AU - Chen, J. R.

AU - Huang, J. K.

AU - Chiu, C. H.

AU - Kuo, Hao-Chung

AU - Lu, Tien-chang

AU - Lin, Shiuan-Huei

AU - Wang, S. C.

PY - 2009/6/1

Y1 - 2009/6/1

N2 - A method for forming a current blocking layer (CBL) by ion implantation in GaN-based vertical-injection light-emitting diodes (VI-LEDs) was proposed. It was found that the use of CBL in VI-LEDs can effectively reduce the current crowding effect and enhance the light output power. The uniform emission intensity distribution of VI-LEDs with CBL was demonstrated by electroluminescence measurements. Experimental results show that the wall-plug efficiency was enhanced by 12.3% at an injection current of 20 mA, compared to that of VI-LEDs without CBL, and by 56.2% compared to that of conventional LEDs. The device simulation results reveal that the current path can be blocked by CBL, resulting in high light extraction efficiencies and large current densities within the effective emission region of active layers.

AB - A method for forming a current blocking layer (CBL) by ion implantation in GaN-based vertical-injection light-emitting diodes (VI-LEDs) was proposed. It was found that the use of CBL in VI-LEDs can effectively reduce the current crowding effect and enhance the light output power. The uniform emission intensity distribution of VI-LEDs with CBL was demonstrated by electroluminescence measurements. Experimental results show that the wall-plug efficiency was enhanced by 12.3% at an injection current of 20 mA, compared to that of VI-LEDs without CBL, and by 56.2% compared to that of conventional LEDs. The device simulation results reveal that the current path can be blocked by CBL, resulting in high light extraction efficiencies and large current densities within the effective emission region of active layers.

KW - Current blocking layer (CBL)

KW - Current crowding

KW - GaN

KW - Ion implantation

KW - Vertical-injection light-emitting diodes VILEDs)

KW - Wall-plug efficiency (WPE)

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U2 - 10.1109/LPT.2009.2016431

DO - 10.1109/LPT.2009.2016431

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SN - 1041-1135

VL - 21

SP - 688

EP - 690

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 11

ER -

Improving light output power of the GaN-Based vertical-injection light-emitting diodes by Mg⁺ implanted current blocking layer

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Keywords

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