Improving light output power of the GaN-Based vertical-injection light-emitting diodes by Mg+ implanted current blocking layer

Min An Tsai*, Peichen Yu, J. R. Chen, J. K. Huang, C. H. Chiu, Hao-Chung Kuo, Tien-chang Lu, Shiuan-Huei Lin, S. C. Wang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

26 Scopus citations

Abstract

A method for forming a current blocking layer (CBL) by ion implantation in GaN-based vertical-injection light-emitting diodes (VI-LEDs) was proposed. It was found that the use of CBL in VI-LEDs can effectively reduce the current crowding effect and enhance the light output power. The uniform emission intensity distribution of VI-LEDs with CBL was demonstrated by electroluminescence measurements. Experimental results show that the wall-plug efficiency was enhanced by 12.3% at an injection current of 20 mA, compared to that of VI-LEDs without CBL, and by 56.2% compared to that of conventional LEDs. The device simulation results reveal that the current path can be blocked by CBL, resulting in high light extraction efficiencies and large current densities within the effective emission region of active layers.

Original languageEnglish
Pages (from-to)688-690
Number of pages3
JournalIEEE Photonics Technology Letters
Volume21
Issue number11
DOIs
StatePublished - 1 Jun 2009

Keywords

  • Current blocking layer (CBL)
  • Current crowding
  • GaN
  • Ion implantation
  • Vertical-injection light-emitting diodes VILEDs)
  • Wall-plug efficiency (WPE)

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