Improving Interface State Density of TiN/HfO2/IL Gate Stack on Si0.5Ge0.5 by Optimization of Post Metallization Annealing and Oxygen Pressure

Meng Chien Lee; Wei Li Lee; Cheng Yu Yu; Hung Ju Lin; Hsien Ho Liu; Jun Lin Zhang; Shin Yuan Wang; Chen-Han Chou; Guang Li Luo; Chao-Hsin Chien

doi:10.1109/VLSI-TSA48913.2020.9203589

Improving Interface State Density of TiN/HfO₂/IL Gate Stack on Si_0.5Ge_0.5by Optimization of Post Metallization Annealing and Oxygen Pressure

Meng Chien Lee^*, Wei Li Lee, Cheng Yu Yu, Hung Ju Lin, Hsien Ho Liu, Jun Lin Zhang, Shin Yuan Wang, Chen-Han Chou, Guang Li Luo, Chao-Hsin Chien

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

In this paper, we fabricated TiN/HfO2-based gate stacks on epi- Si0.5 Ge0.5 substrates with remarkably low interface trap density (Dit) by optimizing the temperature and pressure in the annealing ambient. We found that oxygen in ambient play a subtle role in the resultant properties of the gate stack. During annealing, insufficient oxygen supply to the stack cannot effectively repair the slow oxide traps, while too much oxygen will cause excess SiGe surface oxidation and lead to higher Dit. For the first time, the impact of diffused oxygen during thermal processing on the electrical properties of the TiN/HfO2/IL/SiGe gate stack is systematically investigated.

Original language	English
Title of host publication	2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	102-103
Number of pages	2
ISBN (Electronic)	9781728142326
DOIs	https://doi.org/10.1109/VLSI-TSA48913.2020.9203589
State	Published - Aug 2020
Event	2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020 - Hsinchu, Taiwan Duration: 10 Aug 2020 → 13 Aug 2020

Publication series

Name	2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020

Conference

Conference	2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020
Country/Territory	Taiwan
City	Hsinchu
Period	10/08/20 → 13/08/20

Access to Document

10.1109/VLSI-TSA48913.2020.9203589

Cite this

Lee, M. C., Lee, W. L., Yu, C. Y., Lin, H. J., Liu, H. H., Zhang, J. L., Wang, S. Y., Chou, C-H., Luo, G. L., & Chien, C-H. (2020). Improving Interface State Density of TiN/HfO₂/IL Gate Stack on Si_0.5Ge_0.5by Optimization of Post Metallization Annealing and Oxygen Pressure. In 2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020 (pp. 102-103). [9203589] (2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSI-TSA48913.2020.9203589

Lee, Meng Chien ; Lee, Wei Li ; Yu, Cheng Yu et al. / Improving Interface State Density of TiN/HfO₂/IL Gate Stack on Si_0.5Ge_0.5by Optimization of Post Metallization Annealing and Oxygen Pressure. 2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020. Institute of Electrical and Electronics Engineers Inc., 2020. pp. 102-103 (2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020).

@inproceedings{bb6ba8409b2e43e1a2ad66f489b612d9,

title = "Improving Interface State Density of TiN/HfO2/IL Gate Stack on Si0.5Ge0.5 by Optimization of Post Metallization Annealing and Oxygen Pressure",

abstract = "In this paper, we fabricated TiN/HfO2-based gate stacks on epi- Si0.5 Ge0.5 substrates with remarkably low interface trap density (Dit) by optimizing the temperature and pressure in the annealing ambient. We found that oxygen in ambient play a subtle role in the resultant properties of the gate stack. During annealing, insufficient oxygen supply to the stack cannot effectively repair the slow oxide traps, while too much oxygen will cause excess SiGe surface oxidation and lead to higher Dit. For the first time, the impact of diffused oxygen during thermal processing on the electrical properties of the TiN/HfO2/IL/SiGe gate stack is systematically investigated.",

author = "Lee, {Meng Chien} and Lee, {Wei Li} and Yu, {Cheng Yu} and Lin, {Hung Ju} and Liu, {Hsien Ho} and Zhang, {Jun Lin} and Wang, {Shin Yuan} and Chen-Han Chou and Luo, {Guang Li} and Chao-Hsin Chien",

note = "Publisher Copyright: {\textcopyright} 2020 IEEE.; 2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020 ; Conference date: 10-08-2020 Through 13-08-2020",

year = "2020",

month = aug,

doi = "10.1109/VLSI-TSA48913.2020.9203589",

language = "English",

series = "2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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address = "United States",

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Lee, MC, Lee, WL, Yu, CY, Lin, HJ, Liu, HH, Zhang, JL, Wang, SY, Chou, C-H, Luo, GL & Chien, C-H 2020, Improving Interface State Density of TiN/HfO₂/IL Gate Stack on Si_0.5Ge_0.5by Optimization of Post Metallization Annealing and Oxygen Pressure. in 2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020., 9203589, 2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020, Institute of Electrical and Electronics Engineers Inc., pp. 102-103, 2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020, Hsinchu, Taiwan, 10/08/20. https://doi.org/10.1109/VLSI-TSA48913.2020.9203589

Improving Interface State Density of TiN/HfO₂/IL Gate Stack on Si_0.5Ge_0.5by Optimization of Post Metallization Annealing and Oxygen Pressure. / Lee, Meng Chien; Lee, Wei Li; Yu, Cheng Yu et al.
2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020. Institute of Electrical and Electronics Engineers Inc., 2020. p. 102-103 9203589 (2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Lee, Meng Chien

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AU - Yu, Cheng Yu

AU - Lin, Hung Ju

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AB - In this paper, we fabricated TiN/HfO2-based gate stacks on epi- Si0.5 Ge0.5 substrates with remarkably low interface trap density (Dit) by optimizing the temperature and pressure in the annealing ambient. We found that oxygen in ambient play a subtle role in the resultant properties of the gate stack. During annealing, insufficient oxygen supply to the stack cannot effectively repair the slow oxide traps, while too much oxygen will cause excess SiGe surface oxidation and lead to higher Dit. For the first time, the impact of diffused oxygen during thermal processing on the electrical properties of the TiN/HfO2/IL/SiGe gate stack is systematically investigated.

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Lee MC, Lee WL, Yu CY, Lin HJ, Liu HH, Zhang JL et al. Improving Interface State Density of TiN/HfO₂/IL Gate Stack on Si_0.5Ge_0.5by Optimization of Post Metallization Annealing and Oxygen Pressure. In 2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020. Institute of Electrical and Electronics Engineers Inc. 2020. p. 102-103. 9203589. (2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020). doi: 10.1109/VLSI-TSA48913.2020.9203589