Improving Interface State Density and Thermal Stability of High-κ Gate Stack Through High-Vacuum Annealing on Si0.5Ge0.5

Wei Li Lee; Cheng Yu Yu; Jun Lin Zhang; Guang Li Luo; Chao-Hsin Chien

doi:10.1109/LED.2019.2905139

Improving Interface State Density and Thermal Stability of High-κ Gate Stack Through High-Vacuum Annealing on Si_0.5Ge_0.5

Wei Li Lee, Cheng Yu Yu, Jun Lin Zhang, Guang Li Luo, Chao-Hsin Chien^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

We fabricated HfO₂-based gate stacks on epi-Si_0.5Ge_0.5 substrates and investigated the effect of thermal treatment on their structural and electrical properties at varying temperatures and pressures in oxygen ambient. The thermal treatment process led to severe degradation of interface quality as the temperature increased. Material analyses indicated that annealing in oxygen ambient resulted in oxygen diffusion from the high-κ material to the SiGe surface, causing undesirable SiGe reoxidation. In high-vacuum annealing, an interface state density of approximately 1.4 × 10¹¹ eV^-1 cm^-2 and a thermal stability of up to 500 °C were achieved for the gate stack on SiGe.

Original language	English
Article number	8667385
Pages (from-to)	678-681
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	40
Issue number	5
DOIs	https://doi.org/10.1109/LED.2019.2905139
State	Published - 1 May 2019

Keywords

SiGe channel
high-vacuum annealing (HVA)
interface passivation

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@article{d2ee4553797f46baa22f563b0d3abbda,

title = "Improving Interface State Density and Thermal Stability of High-κ Gate Stack Through High-Vacuum Annealing on Si0.5Ge0.5",

abstract = "We fabricated HfO2-based gate stacks on epi-Si0.5Ge0.5 substrates and investigated the effect of thermal treatment on their structural and electrical properties at varying temperatures and pressures in oxygen ambient. The thermal treatment process led to severe degradation of interface quality as the temperature increased. Material analyses indicated that annealing in oxygen ambient resulted in oxygen diffusion from the high-κ material to the SiGe surface, causing undesirable SiGe reoxidation. In high-vacuum annealing, an interface state density of approximately 1.4 × 1011 eV-1 cm-2 and a thermal stability of up to 500 °C were achieved for the gate stack on SiGe.",

keywords = "SiGe channel, high-vacuum annealing (HVA), interface passivation",

author = "Lee, {Wei Li} and Yu, {Cheng Yu} and Zhang, {Jun Lin} and Luo, {Guang Li} and Chao-Hsin Chien",

year = "2019",

month = may,

day = "1",

doi = "10.1109/LED.2019.2905139",

language = "English",

volume = "40",

pages = "678--681",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "5",

}

TY - JOUR

T1 - Improving Interface State Density and Thermal Stability of High-κ Gate Stack Through High-Vacuum Annealing on Si0.5Ge0.5

AU - Lee, Wei Li

AU - Yu, Cheng Yu

AU - Zhang, Jun Lin

AU - Luo, Guang Li

AU - Chien, Chao-Hsin

PY - 2019/5/1

Y1 - 2019/5/1

N2 - We fabricated HfO2-based gate stacks on epi-Si0.5Ge0.5 substrates and investigated the effect of thermal treatment on their structural and electrical properties at varying temperatures and pressures in oxygen ambient. The thermal treatment process led to severe degradation of interface quality as the temperature increased. Material analyses indicated that annealing in oxygen ambient resulted in oxygen diffusion from the high-κ material to the SiGe surface, causing undesirable SiGe reoxidation. In high-vacuum annealing, an interface state density of approximately 1.4 × 1011 eV-1 cm-2 and a thermal stability of up to 500 °C were achieved for the gate stack on SiGe.

AB - We fabricated HfO2-based gate stacks on epi-Si0.5Ge0.5 substrates and investigated the effect of thermal treatment on their structural and electrical properties at varying temperatures and pressures in oxygen ambient. The thermal treatment process led to severe degradation of interface quality as the temperature increased. Material analyses indicated that annealing in oxygen ambient resulted in oxygen diffusion from the high-κ material to the SiGe surface, causing undesirable SiGe reoxidation. In high-vacuum annealing, an interface state density of approximately 1.4 × 1011 eV-1 cm-2 and a thermal stability of up to 500 °C were achieved for the gate stack on SiGe.

KW - SiGe channel

KW - high-vacuum annealing (HVA)

KW - interface passivation

UR - http://www.scopus.com/inward/record.url?scp=85065039716&partnerID=8YFLogxK

U2 - 10.1109/LED.2019.2905139

DO - 10.1109/LED.2019.2905139

M3 - Article

AN - SCOPUS:85065039716

SN - 0741-3106

VL - 40

SP - 678

EP - 681

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 5

M1 - 8667385

ER -

Improving Interface State Density and Thermal Stability of High-κ Gate Stack Through High-Vacuum Annealing on Si_0.5Ge_0.5

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Keywords

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