Improving ESD robustness of stacked diodes with embedded SCR for RF applications in 65-nm CMOS

Chun Yu Lin; Mei Lian Fan; Ming-Dou Ker; Li Wei Chu; Jen Chou Tseng; Ming Hsiang Song

doi:10.1109/IRPS.2014.6861132

Improving ESD robustness of stacked diodes with embedded SCR for RF applications in 65-nm CMOS

Chun Yu Lin, Mei Lian Fan, Ming-Dou Ker, Li Wei Chu, Jen Chou Tseng, Ming Hsiang Song

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

13 Scopus citations

Abstract

To protect the radio-frequency (RF) integrated circuits from the electrostatic discharge (ESD) damage in nanoscale CMOS process, the ESD protection circuit must be carefully designed. In this work, stacked diodes with embedded silicon-controlled rectifier (SCR) to improve ESD robustness was proposed for RF applications. Experimental results in 65-nm CMOS process show that the proposed design can achieve low parasitic capacitance, low turn-on resistance, and high ESD robustness.

Original language	English
Title of host publication	2014 IEEE International Reliability Physics Symposium, IRPS 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Print)	9781479933167
DOIs	https://doi.org/10.1109/IRPS.2014.6861132
State	Published - 1 Jan 2014
Event	52nd IEEE International Reliability Physics Symposium, IRPS 2014 - Waikoloa, HI, United States Duration: 1 Jun 2014 → 5 Jun 2014

Publication series

Name	IEEE International Reliability Physics Symposium Proceedings
ISSN (Print)	1541-7026

Conference

Conference	52nd IEEE International Reliability Physics Symposium, IRPS 2014
Country/Territory	United States
City	Waikoloa, HI
Period	1/06/14 → 5/06/14

Keywords

Diode
electrostatic discharge (ESD)
radio-frequency (RF)
silicon-controlled rectifier (SCR)

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10.1109/IRPS.2014.6861132

Cite this

Lin, C. Y., Fan, M. L., Ker, M-D., Chu, L. W., Tseng, J. C., & Song, M. H. (2014). Improving ESD robustness of stacked diodes with embedded SCR for RF applications in 65-nm CMOS. In 2014 IEEE International Reliability Physics Symposium, IRPS 2014 [6861132] (IEEE International Reliability Physics Symposium Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IRPS.2014.6861132

@inproceedings{3972800072844874aa3079622d9b5017,

title = "Improving ESD robustness of stacked diodes with embedded SCR for RF applications in 65-nm CMOS",

abstract = "To protect the radio-frequency (RF) integrated circuits from the electrostatic discharge (ESD) damage in nanoscale CMOS process, the ESD protection circuit must be carefully designed. In this work, stacked diodes with embedded silicon-controlled rectifier (SCR) to improve ESD robustness was proposed for RF applications. Experimental results in 65-nm CMOS process show that the proposed design can achieve low parasitic capacitance, low turn-on resistance, and high ESD robustness.",

keywords = "Diode, electrostatic discharge (ESD), radio-frequency (RF), silicon-controlled rectifier (SCR)",

author = "Lin, {Chun Yu} and Fan, {Mei Lian} and Ming-Dou Ker and Chu, {Li Wei} and Tseng, {Jen Chou} and Song, {Ming Hsiang}",

year = "2014",

month = jan,

day = "1",

doi = "10.1109/IRPS.2014.6861132",

language = "English",

isbn = "9781479933167",

series = "IEEE International Reliability Physics Symposium Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2014 IEEE International Reliability Physics Symposium, IRPS 2014",

address = "United States",

note = "null ; Conference date: 01-06-2014 Through 05-06-2014",

}

Lin, CY, Fan, ML, Ker, M-D, Chu, LW, Tseng, JC & Song, MH 2014, Improving ESD robustness of stacked diodes with embedded SCR for RF applications in 65-nm CMOS. in 2014 IEEE International Reliability Physics Symposium, IRPS 2014., 6861132, IEEE International Reliability Physics Symposium Proceedings, Institute of Electrical and Electronics Engineers Inc., 52nd IEEE International Reliability Physics Symposium, IRPS 2014, Waikoloa, HI, United States, 1/06/14. https://doi.org/10.1109/IRPS.2014.6861132

Improving ESD robustness of stacked diodes with embedded SCR for RF applications in 65-nm CMOS. / Lin, Chun Yu; Fan, Mei Lian; Ker, Ming-Dou et al.

2014 IEEE International Reliability Physics Symposium, IRPS 2014. Institute of Electrical and Electronics Engineers Inc., 2014. 6861132 (IEEE International Reliability Physics Symposium Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Improving ESD robustness of stacked diodes with embedded SCR for RF applications in 65-nm CMOS

AU - Lin, Chun Yu

AU - Fan, Mei Lian

AU - Ker, Ming-Dou

AU - Chu, Li Wei

AU - Tseng, Jen Chou

AU - Song, Ming Hsiang

PY - 2014/1/1

Y1 - 2014/1/1

N2 - To protect the radio-frequency (RF) integrated circuits from the electrostatic discharge (ESD) damage in nanoscale CMOS process, the ESD protection circuit must be carefully designed. In this work, stacked diodes with embedded silicon-controlled rectifier (SCR) to improve ESD robustness was proposed for RF applications. Experimental results in 65-nm CMOS process show that the proposed design can achieve low parasitic capacitance, low turn-on resistance, and high ESD robustness.

AB - To protect the radio-frequency (RF) integrated circuits from the electrostatic discharge (ESD) damage in nanoscale CMOS process, the ESD protection circuit must be carefully designed. In this work, stacked diodes with embedded silicon-controlled rectifier (SCR) to improve ESD robustness was proposed for RF applications. Experimental results in 65-nm CMOS process show that the proposed design can achieve low parasitic capacitance, low turn-on resistance, and high ESD robustness.

KW - Diode

KW - electrostatic discharge (ESD)

KW - radio-frequency (RF)

KW - silicon-controlled rectifier (SCR)

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U2 - 10.1109/IRPS.2014.6861132

DO - 10.1109/IRPS.2014.6861132

M3 - Conference contribution

AN - SCOPUS:84905662700

SN - 9781479933167

T3 - IEEE International Reliability Physics Symposium Proceedings

BT - 2014 IEEE International Reliability Physics Symposium, IRPS 2014

PB - Institute of Electrical and Electronics Engineers Inc.

Y2 - 1 June 2014 through 5 June 2014

ER -

Lin CY, Fan ML, Ker M-D, Chu LW, Tseng JC, Song MH. Improving ESD robustness of stacked diodes with embedded SCR for RF applications in 65-nm CMOS. In 2014 IEEE International Reliability Physics Symposium, IRPS 2014. Institute of Electrical and Electronics Engineers Inc. 2014. 6861132. (IEEE International Reliability Physics Symposium Proceedings). doi: 10.1109/IRPS.2014.6861132

Improving ESD robustness of stacked diodes with embedded SCR for RF applications in 65-nm CMOS

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