Improving electrical characteristics of High-k NiTiO dielectric with nitrogen ion implantation

Wen Luh Yang; Tien-Sheng Chao; Shine China Chen; Chin Hao Yang; Wu Chin Peng

doi:10.1143/JJAP.45.6902

Improving electrical characteristics of High-k NiTiO dielectric with nitrogen ion implantation

Wen Luh Yang^*, Tien-Sheng Chao, Shine China Chen, Chin Hao Yang, Wu Chin Peng

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

A new high-dielectric-constant (k) NiTiO dielectric film with a low temperature has been investigated for the first time. The k of the NiTiO film was estimated to be larger than 40. The roughness of the NiTiO dielectric film to nitrogen ion implantation (I/I) was uniform, thus causing a low leakage current (<10^-9 A) and a high breakdown voltage (<25 MV/cm ²). These results are superior to those reported in the literature, suggesting a potential use of the NiTiO film as dielectric for future RF/mixed IC applications.

Original language	English
Pages (from-to)	6902-6904
Number of pages	3
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	45
Issue number	9 A
DOIs	https://doi.org/10.1143/JJAP.45.6902
State	Published - 7 Sep 2006

Keywords

High-k
MIM
NiTiO

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10.1143/JJAP.45.6902

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title = "Improving electrical characteristics of High-k NiTiO dielectric with nitrogen ion implantation",

abstract = "A new high-dielectric-constant (k) NiTiO dielectric film with a low temperature has been investigated for the first time. The k of the NiTiO film was estimated to be larger than 40. The roughness of the NiTiO dielectric film to nitrogen ion implantation (I/I) was uniform, thus causing a low leakage current (<10-9 A) and a high breakdown voltage (<25 MV/cm 2). These results are superior to those reported in the literature, suggesting a potential use of the NiTiO film as dielectric for future RF/mixed IC applications.",

keywords = "High-k, MIM, NiTiO",

author = "Yang, {Wen Luh} and Tien-Sheng Chao and Chen, {Shine China} and Yang, {Chin Hao} and Peng, {Wu Chin}",

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doi = "10.1143/JJAP.45.6902",

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T1 - Improving electrical characteristics of High-k NiTiO dielectric with nitrogen ion implantation

AU - Yang, Wen Luh

AU - Chao, Tien-Sheng

AU - Chen, Shine China

AU - Yang, Chin Hao

AU - Peng, Wu Chin

PY - 2006/9/7

Y1 - 2006/9/7

N2 - A new high-dielectric-constant (k) NiTiO dielectric film with a low temperature has been investigated for the first time. The k of the NiTiO film was estimated to be larger than 40. The roughness of the NiTiO dielectric film to nitrogen ion implantation (I/I) was uniform, thus causing a low leakage current (<10-9 A) and a high breakdown voltage (<25 MV/cm 2). These results are superior to those reported in the literature, suggesting a potential use of the NiTiO film as dielectric for future RF/mixed IC applications.

AB - A new high-dielectric-constant (k) NiTiO dielectric film with a low temperature has been investigated for the first time. The k of the NiTiO film was estimated to be larger than 40. The roughness of the NiTiO dielectric film to nitrogen ion implantation (I/I) was uniform, thus causing a low leakage current (<10-9 A) and a high breakdown voltage (<25 MV/cm 2). These results are superior to those reported in the literature, suggesting a potential use of the NiTiO film as dielectric for future RF/mixed IC applications.

KW - High-k

KW - MIM

KW - NiTiO

UR - http://www.scopus.com/inward/record.url?scp=33749028152&partnerID=8YFLogxK

U2 - 10.1143/JJAP.45.6902

DO - 10.1143/JJAP.45.6902

M3 - Article

AN - SCOPUS:33749028152

VL - 45

SP - 6902

EP - 6904

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

SN - 0021-4922

IS - 9 A

ER -

Improving electrical characteristics of High-k NiTiO dielectric with nitrogen ion implantation

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Keywords

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