Improvements in the organometallic heteroepitaxy of indium phosphide directly on silicon

D. S. Wuu; Ray-Hua Horng; K. C. Huang; M. K. Lee

doi:10.1063/1.101017

Improvements in the organometallic heteroepitaxy of indium phosphide directly on silicon

D. S. Wuu^*, Ray-Hua Horng, K. C. Huang, M. K. Lee

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

Specular single-crystal InP epilayers have been grown directly on Si(100) substrates by low-pressure organometallic vapor phase epitaxy. The effects of the initial nucleation process on the structure properties of the films were investigated, and improvements in the growth technique leading to higher quality InP films are reported. The InP/Si epilayer grown under optimum conditions exhibits high optical quality compared with that of the InP homoepilayer. Post-growth thermal annealing at 780°C was also confirmed to be effective in improving the overall quality of InP-on-Si. The results presented are superior to those reported previously for InP/Si heteroepitaxy.

Original language	English
Pages (from-to)	236-238
Number of pages	3
Journal	Applied Physics Letters
Volume	54
Issue number	3
DOIs	https://doi.org/10.1063/1.101017
State	Published - 1989

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title = "Improvements in the organometallic heteroepitaxy of indium phosphide directly on silicon",

abstract = "Specular single-crystal InP epilayers have been grown directly on Si(100) substrates by low-pressure organometallic vapor phase epitaxy. The effects of the initial nucleation process on the structure properties of the films were investigated, and improvements in the growth technique leading to higher quality InP films are reported. The InP/Si epilayer grown under optimum conditions exhibits high optical quality compared with that of the InP homoepilayer. Post-growth thermal annealing at 780°C was also confirmed to be effective in improving the overall quality of InP-on-Si. The results presented are superior to those reported previously for InP/Si heteroepitaxy.",

author = "Wuu, {D. S.} and Ray-Hua Horng and Huang, {K. C.} and Lee, {M. K.}",

year = "1989",

doi = "10.1063/1.101017",

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journal = "Applied Physics Letters",

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T1 - Improvements in the organometallic heteroepitaxy of indium phosphide directly on silicon

AU - Wuu, D. S.

AU - Horng, Ray-Hua

AU - Huang, K. C.

AU - Lee, M. K.

PY - 1989

Y1 - 1989

N2 - Specular single-crystal InP epilayers have been grown directly on Si(100) substrates by low-pressure organometallic vapor phase epitaxy. The effects of the initial nucleation process on the structure properties of the films were investigated, and improvements in the growth technique leading to higher quality InP films are reported. The InP/Si epilayer grown under optimum conditions exhibits high optical quality compared with that of the InP homoepilayer. Post-growth thermal annealing at 780°C was also confirmed to be effective in improving the overall quality of InP-on-Si. The results presented are superior to those reported previously for InP/Si heteroepitaxy.

AB - Specular single-crystal InP epilayers have been grown directly on Si(100) substrates by low-pressure organometallic vapor phase epitaxy. The effects of the initial nucleation process on the structure properties of the films were investigated, and improvements in the growth technique leading to higher quality InP films are reported. The InP/Si epilayer grown under optimum conditions exhibits high optical quality compared with that of the InP homoepilayer. Post-growth thermal annealing at 780°C was also confirmed to be effective in improving the overall quality of InP-on-Si. The results presented are superior to those reported previously for InP/Si heteroepitaxy.

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VL - 54

SP - 236

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

ER -

Improvements in the organometallic heteroepitaxy of indium phosphide directly on silicon

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