Improvement on thermal stability for indium gallium zinc oxide by oxygen vacancy passivation with supercritical fluid cosolvent oxidation

Dun Bao Ruan; Po Tsun Liu; Kai Jhih Gan; Chih Chieh Hsu; Yu Chuan Chiu; Chia Yu Lin; Simon M. Sze

doi:10.1063/5.0069207

Improvement on thermal stability for indium gallium zinc oxide by oxygen vacancy passivation with supercritical fluid cosolvent oxidation

Dun Bao Ruan, Po Tsun Liu^*, Kai Jhih Gan, Chih Chieh Hsu, Yu Chuan Chiu, Chia Yu Lin, Simon M. Sze

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

In order to improve the thermal resistance and stability of indium gallium zinc oxide material, different oxygen vacancy passivation treatments have been carried out for comparison in this work. Through the analysis of x-ray photoelectron spectroscopy and reliable characterization at various temperatures, the internal mechanisms and physical model are well discussed. Notably, compared with other oxidation processes, the supercritical phase fluid-treated sample exhibits excellent electrical performance, high uniformity, and outstanding thermal stability by passivating more deep-located oxygen vacancy and introducing more well-bounded oxygen atom. Considering with the high-density device integration and critical heat dissipation issue, this research may provide an important reference for realizing monolithic 3D integration.

Original language	English
Article number	231602
Journal	Applied Physics Letters
Volume	119
Issue number	23
DOIs	https://doi.org/10.1063/5.0069207
State	Published - 6 Dec 2021

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title = "Improvement on thermal stability for indium gallium zinc oxide by oxygen vacancy passivation with supercritical fluid cosolvent oxidation",

abstract = "In order to improve the thermal resistance and stability of indium gallium zinc oxide material, different oxygen vacancy passivation treatments have been carried out for comparison in this work. Through the analysis of x-ray photoelectron spectroscopy and reliable characterization at various temperatures, the internal mechanisms and physical model are well discussed. Notably, compared with other oxidation processes, the supercritical phase fluid-treated sample exhibits excellent electrical performance, high uniformity, and outstanding thermal stability by passivating more deep-located oxygen vacancy and introducing more well-bounded oxygen atom. Considering with the high-density device integration and critical heat dissipation issue, this research may provide an important reference for realizing monolithic 3D integration.",

author = "Ruan, {Dun Bao} and Liu, {Po Tsun} and Gan, {Kai Jhih} and Hsu, {Chih Chieh} and Chiu, {Yu Chuan} and Lin, {Chia Yu} and Sze, {Simon M.}",

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doi = "10.1063/5.0069207",

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T1 - Improvement on thermal stability for indium gallium zinc oxide by oxygen vacancy passivation with supercritical fluid cosolvent oxidation

AU - Ruan, Dun Bao

AU - Liu, Po Tsun

AU - Gan, Kai Jhih

AU - Hsu, Chih Chieh

AU - Chiu, Yu Chuan

AU - Lin, Chia Yu

AU - Sze, Simon M.

PY - 2021/12/6

Y1 - 2021/12/6

N2 - In order to improve the thermal resistance and stability of indium gallium zinc oxide material, different oxygen vacancy passivation treatments have been carried out for comparison in this work. Through the analysis of x-ray photoelectron spectroscopy and reliable characterization at various temperatures, the internal mechanisms and physical model are well discussed. Notably, compared with other oxidation processes, the supercritical phase fluid-treated sample exhibits excellent electrical performance, high uniformity, and outstanding thermal stability by passivating more deep-located oxygen vacancy and introducing more well-bounded oxygen atom. Considering with the high-density device integration and critical heat dissipation issue, this research may provide an important reference for realizing monolithic 3D integration.

AB - In order to improve the thermal resistance and stability of indium gallium zinc oxide material, different oxygen vacancy passivation treatments have been carried out for comparison in this work. Through the analysis of x-ray photoelectron spectroscopy and reliable characterization at various temperatures, the internal mechanisms and physical model are well discussed. Notably, compared with other oxidation processes, the supercritical phase fluid-treated sample exhibits excellent electrical performance, high uniformity, and outstanding thermal stability by passivating more deep-located oxygen vacancy and introducing more well-bounded oxygen atom. Considering with the high-density device integration and critical heat dissipation issue, this research may provide an important reference for realizing monolithic 3D integration.

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DO - 10.1063/5.0069207

M3 - Article

AN - SCOPUS:85121042160

SN - 0003-6951

VL - 119

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

M1 - 231602

ER -

Improvement on thermal stability for indium gallium zinc oxide by oxygen vacancy passivation with supercritical fluid cosolvent oxidation

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