Improvement on performance and reliability of TaN/HfO2 LTPS-TFTs with fluorine implantation

Ming Wen Ma; Chih Yang Chen; Chun Jung Su; Woei Cherng Wu; Tsung Yu Yang; Kuo Hsing Kao; Tien-Sheng Chao; Tan Fu Lei

doi:10.1016/j.sse.2007.07.018

Improvement on performance and reliability of TaN/HfO₂ LTPS-TFTs with fluorine implantation

Ming Wen Ma, Chih Yang Chen, Chun Jung Su, Woei Cherng Wu, Tsung Yu Yang, Kuo Hsing Kao, Tien-Sheng Chao^*, Tan Fu Lei

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

In this paper, we demonstrate the low-temperature polycrystalline silicon thin-film transistors (LTPS-TFTs) with TaN metal-gate and HfO₂ gate dielectric to achieve high performance characteristics. A high performance LTPS-TFT with low threshold voltage 0.9 V, excellent subthreshold swing 0.15 V/decade and high I_on/I_min current ratio 1.9 × 10⁶ are derived without any hydrogen treatment. In addition, we also introduce the fluorine implantation prior to the Si thin-film crystallization to passivate the defects in grain-boundaries of the channel film and HfO₂/polysilicon interface. Significant improvements on subthreshold swing and I_min are observed. In addition, the transconductance degradation and threshold voltage instability due to hot carrier stress is also investigated, respectively. Finally, we derive a high reliability and performance LTPS-TFT with low threshold voltage ∼1.38 V, ultra-low subthreshold swing 0.132 V/decade and high I_on/I_min current ratio 1.21 × 10⁷, which is suitable for the application of system-on panel (SOP).

Original language	English
Pages (from-to)	342-347
Number of pages	6
Journal	Solid-State Electronics
Volume	52
Issue number	3
DOIs	https://doi.org/10.1016/j.sse.2007.07.018
State	Published - 1 Mar 2008

Keywords

Fluorine implantation
High-κ
LTPS-TFTs
Metal-gate

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10.1016/j.sse.2007.07.018

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@article{006a852345a3495c82150306cf7e4303,

title = "Improvement on performance and reliability of TaN/HfO2 LTPS-TFTs with fluorine implantation",

abstract = "In this paper, we demonstrate the low-temperature polycrystalline silicon thin-film transistors (LTPS-TFTs) with TaN metal-gate and HfO2 gate dielectric to achieve high performance characteristics. A high performance LTPS-TFT with low threshold voltage 0.9 V, excellent subthreshold swing 0.15 V/decade and high Ion/Imin current ratio 1.9 × 106 are derived without any hydrogen treatment. In addition, we also introduce the fluorine implantation prior to the Si thin-film crystallization to passivate the defects in grain-boundaries of the channel film and HfO2/polysilicon interface. Significant improvements on subthreshold swing and Imin are observed. In addition, the transconductance degradation and threshold voltage instability due to hot carrier stress is also investigated, respectively. Finally, we derive a high reliability and performance LTPS-TFT with low threshold voltage ∼1.38 V, ultra-low subthreshold swing 0.132 V/decade and high Ion/Imin current ratio 1.21 × 107, which is suitable for the application of system-on panel (SOP).",

keywords = "Fluorine implantation, High-κ, LTPS-TFTs, Metal-gate",

author = "Ma, {Ming Wen} and Chen, {Chih Yang} and Su, {Chun Jung} and Wu, {Woei Cherng} and Yang, {Tsung Yu} and Kao, {Kuo Hsing} and Tien-Sheng Chao and Lei, {Tan Fu}",

year = "2008",

month = mar,

day = "1",

doi = "10.1016/j.sse.2007.07.018",

language = "English",

volume = "52",

pages = "342--347",

journal = "Solid-State Electronics",

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T1 - Improvement on performance and reliability of TaN/HfO2 LTPS-TFTs with fluorine implantation

AU - Ma, Ming Wen

AU - Chen, Chih Yang

AU - Su, Chun Jung

AU - Wu, Woei Cherng

AU - Yang, Tsung Yu

AU - Kao, Kuo Hsing

AU - Chao, Tien-Sheng

AU - Lei, Tan Fu

PY - 2008/3/1

Y1 - 2008/3/1

N2 - In this paper, we demonstrate the low-temperature polycrystalline silicon thin-film transistors (LTPS-TFTs) with TaN metal-gate and HfO2 gate dielectric to achieve high performance characteristics. A high performance LTPS-TFT with low threshold voltage 0.9 V, excellent subthreshold swing 0.15 V/decade and high Ion/Imin current ratio 1.9 × 106 are derived without any hydrogen treatment. In addition, we also introduce the fluorine implantation prior to the Si thin-film crystallization to passivate the defects in grain-boundaries of the channel film and HfO2/polysilicon interface. Significant improvements on subthreshold swing and Imin are observed. In addition, the transconductance degradation and threshold voltage instability due to hot carrier stress is also investigated, respectively. Finally, we derive a high reliability and performance LTPS-TFT with low threshold voltage ∼1.38 V, ultra-low subthreshold swing 0.132 V/decade and high Ion/Imin current ratio 1.21 × 107, which is suitable for the application of system-on panel (SOP).

AB - In this paper, we demonstrate the low-temperature polycrystalline silicon thin-film transistors (LTPS-TFTs) with TaN metal-gate and HfO2 gate dielectric to achieve high performance characteristics. A high performance LTPS-TFT with low threshold voltage 0.9 V, excellent subthreshold swing 0.15 V/decade and high Ion/Imin current ratio 1.9 × 106 are derived without any hydrogen treatment. In addition, we also introduce the fluorine implantation prior to the Si thin-film crystallization to passivate the defects in grain-boundaries of the channel film and HfO2/polysilicon interface. Significant improvements on subthreshold swing and Imin are observed. In addition, the transconductance degradation and threshold voltage instability due to hot carrier stress is also investigated, respectively. Finally, we derive a high reliability and performance LTPS-TFT with low threshold voltage ∼1.38 V, ultra-low subthreshold swing 0.132 V/decade and high Ion/Imin current ratio 1.21 × 107, which is suitable for the application of system-on panel (SOP).

KW - Fluorine implantation

KW - High-κ

KW - LTPS-TFTs

KW - Metal-gate

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DO - 10.1016/j.sse.2007.07.018

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JO - Solid-State Electronics

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IS - 3

ER -

Improvement on performance and reliability of TaN/HfO₂ LTPS-TFTs with fluorine implantation

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