Improvement on ESD robustness of lateral DMOS in high-voltage CMOS ICs by body current injection

Wen Yi Chen; Ming-Dou Ker; Yeh Ning Jou; Yeh Jen Huang; Geeng Lih Lin

doi:10.1109/ISCAS.2009.5117766

Improvement on ESD robustness of lateral DMOS in high-voltage CMOS ICs by body current injection

Wen Yi Chen^*, Ming-Dou Ker, Yeh Ning Jou, Yeh Jen Huang, Geeng Lih Lin

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

12 Scopus citations

Abstract

With the waffle layout style, body-injected technique implemented by body current injection on n-channel lateral DMOS (nLDMOS) has been successfully verified in a 0.5-μm 16-V BCD process. The TLP measured results confirmed that the secondary breakdown current (It2) of waffle nLDMOS can be significantly increased by the body current injection with the corresponding trigger circuit design. The latchup immunity of power-rail ESD protection circuit can be further improved by the stacked configuration with multiple nLDMOS devices in HV ICs.

Original language	English
Title of host publication	2009 IEEE International Symposium on Circuits and Systems, ISCAS 2009
Pages	385-388
Number of pages	4
DOIs	https://doi.org/10.1109/ISCAS.2009.5117766
State	Published - 26 Oct 2009
Event	2009 IEEE International Symposium on Circuits and Systems, ISCAS 2009 - Taipei, Taiwan Duration: 24 May 2009 → 27 May 2009

Publication series

Name	Proceedings - IEEE International Symposium on Circuits and Systems
ISSN (Print)	0271-4310

Conference

Conference	2009 IEEE International Symposium on Circuits and Systems, ISCAS 2009
Country/Territory	Taiwan
City	Taipei
Period	24/05/09 → 27/05/09

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10.1109/ISCAS.2009.5117766

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Chen, W. Y., Ker, M-D., Jou, Y. N., Huang, Y. J., & Lin, G. L. (2009). Improvement on ESD robustness of lateral DMOS in high-voltage CMOS ICs by body current injection. In 2009 IEEE International Symposium on Circuits and Systems, ISCAS 2009 (pp. 385-388). [5117766] (Proceedings - IEEE International Symposium on Circuits and Systems). https://doi.org/10.1109/ISCAS.2009.5117766

@inproceedings{978e5fa6ed6f42c693c457957d31c861,

title = "Improvement on ESD robustness of lateral DMOS in high-voltage CMOS ICs by body current injection",

abstract = "With the waffle layout style, body-injected technique implemented by body current injection on n-channel lateral DMOS (nLDMOS) has been successfully verified in a 0.5-μm 16-V BCD process. The TLP measured results confirmed that the secondary breakdown current (It2) of waffle nLDMOS can be significantly increased by the body current injection with the corresponding trigger circuit design. The latchup immunity of power-rail ESD protection circuit can be further improved by the stacked configuration with multiple nLDMOS devices in HV ICs.",

author = "Chen, {Wen Yi} and Ming-Dou Ker and Jou, {Yeh Ning} and Huang, {Yeh Jen} and Lin, {Geeng Lih}",

year = "2009",

month = oct,

day = "26",

doi = "10.1109/ISCAS.2009.5117766",

language = "English",

isbn = "9781424438280",

series = "Proceedings - IEEE International Symposium on Circuits and Systems",

pages = "385--388",

booktitle = "2009 IEEE International Symposium on Circuits and Systems, ISCAS 2009",

note = "2009 IEEE International Symposium on Circuits and Systems, ISCAS 2009 ; Conference date: 24-05-2009 Through 27-05-2009",

}

Chen, WY, Ker, M-D, Jou, YN, Huang, YJ & Lin, GL 2009, Improvement on ESD robustness of lateral DMOS in high-voltage CMOS ICs by body current injection. in 2009 IEEE International Symposium on Circuits and Systems, ISCAS 2009., 5117766, Proceedings - IEEE International Symposium on Circuits and Systems, pp. 385-388, 2009 IEEE International Symposium on Circuits and Systems, ISCAS 2009, Taipei, Taiwan, 24/05/09. https://doi.org/10.1109/ISCAS.2009.5117766

Improvement on ESD robustness of lateral DMOS in high-voltage CMOS ICs by body current injection. / Chen, Wen Yi; Ker, Ming-Dou; Jou, Yeh Ning et al.
2009 IEEE International Symposium on Circuits and Systems, ISCAS 2009. 2009. p. 385-388 5117766 (Proceedings - IEEE International Symposium on Circuits and Systems).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Improvement on ESD robustness of lateral DMOS in high-voltage CMOS ICs by body current injection

AU - Chen, Wen Yi

AU - Ker, Ming-Dou

AU - Jou, Yeh Ning

AU - Huang, Yeh Jen

AU - Lin, Geeng Lih

PY - 2009/10/26

Y1 - 2009/10/26

N2 - With the waffle layout style, body-injected technique implemented by body current injection on n-channel lateral DMOS (nLDMOS) has been successfully verified in a 0.5-μm 16-V BCD process. The TLP measured results confirmed that the secondary breakdown current (It2) of waffle nLDMOS can be significantly increased by the body current injection with the corresponding trigger circuit design. The latchup immunity of power-rail ESD protection circuit can be further improved by the stacked configuration with multiple nLDMOS devices in HV ICs.

AB - With the waffle layout style, body-injected technique implemented by body current injection on n-channel lateral DMOS (nLDMOS) has been successfully verified in a 0.5-μm 16-V BCD process. The TLP measured results confirmed that the secondary breakdown current (It2) of waffle nLDMOS can be significantly increased by the body current injection with the corresponding trigger circuit design. The latchup immunity of power-rail ESD protection circuit can be further improved by the stacked configuration with multiple nLDMOS devices in HV ICs.

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U2 - 10.1109/ISCAS.2009.5117766

DO - 10.1109/ISCAS.2009.5117766

M3 - Conference contribution

AN - SCOPUS:70350144782

SN - 9781424438280

T3 - Proceedings - IEEE International Symposium on Circuits and Systems

SP - 385

EP - 388

BT - 2009 IEEE International Symposium on Circuits and Systems, ISCAS 2009

T2 - 2009 IEEE International Symposium on Circuits and Systems, ISCAS 2009

Y2 - 24 May 2009 through 27 May 2009

ER -

Improvement on ESD robustness of lateral DMOS in high-voltage CMOS ICs by body current injection

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