Improvement of voltage linearity in high-κ MIM capacitors using HfO2-SiO2 stacked dielectric

Sun Jung Kim; Byung Jin Cho; Ming Fu Li; Shi Jin Ding; Chunxiang Zhu; Ming Bin Yu; Babu Narayanan; Albert Chin; Dim Lee Kwong

doi:10.1109/LED.2004.832785

Improvement of voltage linearity in high-κ MIM capacitors using HfO₂-SiO₂ stacked dielectric

Sun Jung Kim^*, Byung Jin Cho, Ming Fu Li, Shi Jin Ding, Chunxiang Zhu, Ming Bin Yu, Babu Narayanan, Albert Chin, Dim Lee Kwong

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

91 Scopus citations

Abstract

It is demonstrated that the voltage coefficients of capacitance (VCC) in high-κ metal-insulator-metal (MIM) capacitors can be actively engineered and voltage linearity can be significantly improved maintaining high capacitance density, by using a stacked insulator structure of high-κ and SiO₂ dielectrics. A MIM capacitor with capacitance density of 6 fFμm² and quadratic VCC of only 14 ppm/V² has been demonstrated together with excellent frequency and temperature dependence (temperature coefficients of capacitance of 54 ppm °C) as well as low leakage current of less than 10 nA/cm² up to 4 V at 125 °C.

Original language	English
Pages (from-to)	538-540
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	25
Issue number	8
DOIs	https://doi.org/10.1109/LED.2004.832785
State	Published - 1 Aug 2004

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@article{830675821ba140c4a962ff0becfcea26,

title = "Improvement of voltage linearity in high-κ MIM capacitors using HfO2-SiO2 stacked dielectric",

abstract = "It is demonstrated that the voltage coefficients of capacitance (VCC) in high-κ metal-insulator-metal (MIM) capacitors can be actively engineered and voltage linearity can be significantly improved maintaining high capacitance density, by using a stacked insulator structure of high-κ and SiO2 dielectrics. A MIM capacitor with capacitance density of 6 fFμm2 and quadratic VCC of only 14 ppm/V2 has been demonstrated together with excellent frequency and temperature dependence (temperature coefficients of capacitance of 54 ppm °C) as well as low leakage current of less than 10 nA/cm2 up to 4 V at 125 °C.",

author = "Kim, {Sun Jung} and Cho, {Byung Jin} and Li, {Ming Fu} and Ding, {Shi Jin} and Chunxiang Zhu and Yu, {Ming Bin} and Babu Narayanan and Albert Chin and Kwong, {Dim Lee}",

year = "2004",

month = aug,

day = "1",

doi = "10.1109/LED.2004.832785",

language = "English",

volume = "25",

pages = "538--540",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "8",

}

TY - JOUR

T1 - Improvement of voltage linearity in high-κ MIM capacitors using HfO2-SiO2 stacked dielectric

AU - Kim, Sun Jung

AU - Cho, Byung Jin

AU - Li, Ming Fu

AU - Ding, Shi Jin

AU - Zhu, Chunxiang

AU - Yu, Ming Bin

AU - Narayanan, Babu

AU - Chin, Albert

AU - Kwong, Dim Lee

PY - 2004/8/1

Y1 - 2004/8/1

N2 - It is demonstrated that the voltage coefficients of capacitance (VCC) in high-κ metal-insulator-metal (MIM) capacitors can be actively engineered and voltage linearity can be significantly improved maintaining high capacitance density, by using a stacked insulator structure of high-κ and SiO2 dielectrics. A MIM capacitor with capacitance density of 6 fFμm2 and quadratic VCC of only 14 ppm/V2 has been demonstrated together with excellent frequency and temperature dependence (temperature coefficients of capacitance of 54 ppm °C) as well as low leakage current of less than 10 nA/cm2 up to 4 V at 125 °C.

AB - It is demonstrated that the voltage coefficients of capacitance (VCC) in high-κ metal-insulator-metal (MIM) capacitors can be actively engineered and voltage linearity can be significantly improved maintaining high capacitance density, by using a stacked insulator structure of high-κ and SiO2 dielectrics. A MIM capacitor with capacitance density of 6 fFμm2 and quadratic VCC of only 14 ppm/V2 has been demonstrated together with excellent frequency and temperature dependence (temperature coefficients of capacitance of 54 ppm °C) as well as low leakage current of less than 10 nA/cm2 up to 4 V at 125 °C.

UR - http://www.scopus.com/inward/record.url?scp=3943060190&partnerID=8YFLogxK

U2 - 10.1109/LED.2004.832785

DO - 10.1109/LED.2004.832785

M3 - Article

AN - SCOPUS:3943060190

SN - 0741-3106

VL - 25

SP - 538

EP - 540

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 8

ER -

Improvement of voltage linearity in high-κ MIM capacitors using HfO₂-SiO₂ stacked dielectric

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