Improvement of thin oxides thermally grown on the reactive-ion-etched silicon substrates

Shih Yuan Ueng, Ping Wei Wang, Tzong Kuei Kang, Tien-Sheng Chao, Wen Ho Chen, Bao Tung Dai, Hung Chong Cheng

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Thin oxides thermally grown in reactive-ion-etched (RIE) silicon substrates in N2O and diluted O2 ambient have been studied. The microroughness of the oxide-silicon interface was investigated using a spectrophotometer, atomic force microscopy (AFM), and cross-sectional high-resolution electron microscopy (HRTEM). The microroughness is strongly dependent on the RIE conditions and the post etching treatments. Furthermore, oxidation-enhanced interface microroughness has been observed. As compared with the pure oxides grown in diluted oxygen, N2O-grown oxides exhibit stronger immunity to RIE-induced damage. N2O oxidation of the etched specimens treated with an after-treatment-chamber (ATC) process result in the best electrical properties.

Original languageEnglish
Pages (from-to)2266-2271
Number of pages6
JournalJapanese journal of applied physics
Issue number5R
StatePublished - May 1995


  • AFM
  • Damage
  • Microroughness
  • N20
  • Post etching treatments
  • RIE


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