Improvement of resistive switching uniformity for Al-Zn-Sn-O-based memory device with inserting HfO2 layer

Po-Tsun Liu; Yang Shun Fan; Chun Ching Chen

doi:10.1109/LED.2014.2363491

Improvement of resistive switching uniformity for Al-Zn-Sn-O-based memory device with inserting HfO₂ layer

Po-Tsun Liu, Yang Shun Fan, Chun Ching Chen

Department of Photonics

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

This letter demonstrates the characteristics of a resistive switching memory [resistive random access memory (RRAM)] device with a bilayer structure of aluminum-zinc-tin-oxide (AZTO) and HfO₂-film layers. As for the RRAM operation, the formation and rupture processes of the conductive filaments can be confined in the HfO₂ layer with low-concentration oxygen vacancy. The resistive switching stability and electrical uniformity of bilayer AZTO/HfO₂ RRAM device are obviously enhanced as compared with the one only with a single layer of AZTO film. In addition, a physical mechanism for uniformity improvement is proposed by the localized conduction of conducting filaments.

Original language	English
Article number	6936282
Pages (from-to)	1233-1235
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	35
Issue number	12
DOIs	https://doi.org/10.1109/LED.2014.2363491
State	Published - Dec 2014

Keywords

AZTO
localized conducting filament.
Resistive switching
RRAM

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10.1109/LED.2014.2363491

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@article{3a45175d688248baa4e98aa0b19d1616,

title = "Improvement of resistive switching uniformity for Al-Zn-Sn-O-based memory device with inserting HfO2 layer",

abstract = "This letter demonstrates the characteristics of a resistive switching memory [resistive random access memory (RRAM)] device with a bilayer structure of aluminum-zinc-tin-oxide (AZTO) and HfO2-film layers. As for the RRAM operation, the formation and rupture processes of the conductive filaments can be confined in the HfO2 layer with low-concentration oxygen vacancy. The resistive switching stability and electrical uniformity of bilayer AZTO/HfO2 RRAM device are obviously enhanced as compared with the one only with a single layer of AZTO film. In addition, a physical mechanism for uniformity improvement is proposed by the localized conduction of conducting filaments.",

keywords = "AZTO, localized conducting filament., Resistive switching, RRAM",

author = "Po-Tsun Liu and Fan, {Yang Shun} and Chen, {Chun Ching}",

year = "2014",

month = dec,

doi = "10.1109/LED.2014.2363491",

language = "English",

volume = "35",

pages = "1233--1235",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "12",

}

TY - JOUR

T1 - Improvement of resistive switching uniformity for Al-Zn-Sn-O-based memory device with inserting HfO2 layer

AU - Liu, Po-Tsun

AU - Fan, Yang Shun

AU - Chen, Chun Ching

PY - 2014/12

Y1 - 2014/12

N2 - This letter demonstrates the characteristics of a resistive switching memory [resistive random access memory (RRAM)] device with a bilayer structure of aluminum-zinc-tin-oxide (AZTO) and HfO2-film layers. As for the RRAM operation, the formation and rupture processes of the conductive filaments can be confined in the HfO2 layer with low-concentration oxygen vacancy. The resistive switching stability and electrical uniformity of bilayer AZTO/HfO2 RRAM device are obviously enhanced as compared with the one only with a single layer of AZTO film. In addition, a physical mechanism for uniformity improvement is proposed by the localized conduction of conducting filaments.

AB - This letter demonstrates the characteristics of a resistive switching memory [resistive random access memory (RRAM)] device with a bilayer structure of aluminum-zinc-tin-oxide (AZTO) and HfO2-film layers. As for the RRAM operation, the formation and rupture processes of the conductive filaments can be confined in the HfO2 layer with low-concentration oxygen vacancy. The resistive switching stability and electrical uniformity of bilayer AZTO/HfO2 RRAM device are obviously enhanced as compared with the one only with a single layer of AZTO film. In addition, a physical mechanism for uniformity improvement is proposed by the localized conduction of conducting filaments.

KW - AZTO

KW - localized conducting filament.

KW - Resistive switching

KW - RRAM

UR - http://www.scopus.com/inward/record.url?scp=84913537279&partnerID=8YFLogxK

U2 - 10.1109/LED.2014.2363491

DO - 10.1109/LED.2014.2363491

M3 - Article

AN - SCOPUS:84913537279

SN - 0741-3106

VL - 35

SP - 1233

EP - 1235

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 12

M1 - 6936282

ER -

Improvement of resistive switching uniformity for Al-Zn-Sn-O-based memory device with inserting HfO₂ layer

Abstract

Keywords

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