Improvement of resistive switching properties of Ti/ZrO₂/Pt with embedded germanium

Keyphrases

• Annealing Process 33%
• Concentration Reduction 33%
• Curve Fitting 33%
• Defect Concentration 33%
• Forming Voltage 33%
• Ge Layer 66%
• Germanium 100%
• Germanium Oxide 33%
• High Resistance State 33%
• Ionic Conduction 33%
• Low Resistance State 33%
• Rapid Thermal Annealing 33%
• Reset Process 33%
• Resistive Behavior 33%
• Resistive Switching Properties 100%
• Schottky Emission 33%
• Switching Properties 33%
• Top Electrode 33%
• Zirconium Dioxide 100%
• ZrO2 Films 33%

Engineering

• Annealing Process 50%
• Fitting Curve 50%
• High Resistance State 50%
• Rapid Thermal Annealing 50%
• Reset Process 50%
• Resistive 100%
• Set Process 50%

Material Science

• Annealing 25%
• Film 25%
• Germanium 100%
• Oxide Compound 25%
• Zirconia 100%