Improvement of reliability of metal-oxide semiconductor field-effect transistors with N₂O nitrided gate oxide and N₂O polysilicon gate reoxidation

Keyphrases

• MOSFET 100%
• Pre-oxidation 100%
• Polysilicon Gate 100%
• Nitrided Gate Oxide 100%
• Si Substrate 50%
• Hot Carriers 50%
• Low Thermal Budget 50%
• Oxides 50%
• Substrate Interface 50%
• Nitrogen Incorporation 50%
• Plasma-induced 50%
• Related Technology 50%
• Induced Degradation 50%
• Reverse Short Channel Effect 50%
• Scaled Device 50%
• Immunosuppression 50%

Engineering

• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Gate Oxide 100%
• Reoxidation 100%
• Polysilicon 100%
• Si Substrate 50%
• Substrate Interface 50%
• Induced Degradation 50%

Material Science

• Oxide Compound 100%
• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Hot Carrier 33%