Improvement of reliability for polycrystalline thin-film transistors using self-aligned fluorinated silica glass spacers

Chun Hao Tu; Ting Chang Chang; Po-Tsun Liu; Hsiao-Wen Zan; Ya-Hsiang Tai; Li Wei Feng; Yung Chun Wu; Chun Yen Chang

doi:10.1149/1.1945372

Improvement of reliability for polycrystalline thin-film transistors using self-aligned fluorinated silica glass spacers

Chun Hao Tu^*, Ting Chang Chang, Po-Tsun Liu, Hsiao-Wen Zan, Ya-Hsiang Tai, Li Wei Feng, Yung Chun Wu, Chun Yen Chang

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Polycrystalline silicon thin-film transistors (poly-Si TFTs) with self-aligned fluorine-doped SiO₂ (FSG) spacer were investigated in this study. The presence of FSG spacers can effectively reduce the lateral electrical field near the drain side of a poly-Si TFT device, and strongly passivate Si dangling bonds at the grain boundaries. The significant enhancement in electrical performance suppresses serious kink effect and improves electrical reliability of poly-Si TFTs effectively. In addition, the proposed poly-TFT structure is uncomplicated and compatible with existing TFT manufacturing processes.

Original language	English
Article number	3
Pages (from-to)	G209-G211
Journal	Electrochemical and Solid-State Letters
Volume	8
Issue number	8
DOIs	https://doi.org/10.1149/1.1945372
State	Published - 14 Sep 2005

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title = "Improvement of reliability for polycrystalline thin-film transistors using self-aligned fluorinated silica glass spacers",

abstract = "Polycrystalline silicon thin-film transistors (poly-Si TFTs) with self-aligned fluorine-doped SiO2 (FSG) spacer were investigated in this study. The presence of FSG spacers can effectively reduce the lateral electrical field near the drain side of a poly-Si TFT device, and strongly passivate Si dangling bonds at the grain boundaries. The significant enhancement in electrical performance suppresses serious kink effect and improves electrical reliability of poly-Si TFTs effectively. In addition, the proposed poly-TFT structure is uncomplicated and compatible with existing TFT manufacturing processes.",

author = "Tu, {Chun Hao} and Chang, {Ting Chang} and Po-Tsun Liu and Hsiao-Wen Zan and Ya-Hsiang Tai and Feng, {Li Wei} and Wu, {Yung Chun} and Chang, {Chun Yen}",

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T1 - Improvement of reliability for polycrystalline thin-film transistors using self-aligned fluorinated silica glass spacers

AU - Tu, Chun Hao

AU - Chang, Ting Chang

AU - Liu, Po-Tsun

AU - Zan, Hsiao-Wen

AU - Tai, Ya-Hsiang

AU - Feng, Li Wei

AU - Wu, Yung Chun

AU - Chang, Chun Yen

PY - 2005/9/14

Y1 - 2005/9/14

N2 - Polycrystalline silicon thin-film transistors (poly-Si TFTs) with self-aligned fluorine-doped SiO2 (FSG) spacer were investigated in this study. The presence of FSG spacers can effectively reduce the lateral electrical field near the drain side of a poly-Si TFT device, and strongly passivate Si dangling bonds at the grain boundaries. The significant enhancement in electrical performance suppresses serious kink effect and improves electrical reliability of poly-Si TFTs effectively. In addition, the proposed poly-TFT structure is uncomplicated and compatible with existing TFT manufacturing processes.

AB - Polycrystalline silicon thin-film transistors (poly-Si TFTs) with self-aligned fluorine-doped SiO2 (FSG) spacer were investigated in this study. The presence of FSG spacers can effectively reduce the lateral electrical field near the drain side of a poly-Si TFT device, and strongly passivate Si dangling bonds at the grain boundaries. The significant enhancement in electrical performance suppresses serious kink effect and improves electrical reliability of poly-Si TFTs effectively. In addition, the proposed poly-TFT structure is uncomplicated and compatible with existing TFT manufacturing processes.

UR - http://www.scopus.com/inward/record.url?scp=24344439621&partnerID=8YFLogxK

U2 - 10.1149/1.1945372

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M3 - Article

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VL - 8

SP - G209-G211

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 8

M1 - 3

ER -

Improvement of reliability for polycrystalline thin-film transistors using self-aligned fluorinated silica glass spacers

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