Improvement of polysilicon oxide integrity using NF3-annealing

Wen Luh Yang; Ming Sun Shieh; Yu Min Chen; Tien-Sheng Chao; Don Gey Liu; Tan Fu Lei

doi:10.1143/JJAP.39.L562

Improvement of polysilicon oxide integrity using NF₃-annealing

Wen Luh Yang^*, Ming Sun Shieh, Yu Min Chen, Tien-Sheng Chao, Don Gey Liu, Tan Fu Lei

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

A new method that uses NF₃-annealing improves the polysilicon oxide integrity. By using optimized NF₃ flow-rate, the method provides the advantages of both N and F simultaneously by incorporating stronger Si-N and Si-F bonds at the polysilicon/polyoxide interface. Significant improvements in terms of roughness, breakdown strength, charge-to-breakdown, and stress-induced leakage current have been demonstrated.

Original language	English
Pages (from-to)	L562-L563
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	39
Issue number	6 B
DOIs	https://doi.org/10.1143/JJAP.39.L562
State	Published - 15 Jun 2000

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10.1143/JJAP.39.L562

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@article{cdb4872693c549e4b992024525e79377,

title = "Improvement of polysilicon oxide integrity using NF3-annealing",

abstract = "A new method that uses NF3-annealing improves the polysilicon oxide integrity. By using optimized NF3 flow-rate, the method provides the advantages of both N and F simultaneously by incorporating stronger Si-N and Si-F bonds at the polysilicon/polyoxide interface. Significant improvements in terms of roughness, breakdown strength, charge-to-breakdown, and stress-induced leakage current have been demonstrated.",

author = "Yang, {Wen Luh} and Shieh, {Ming Sun} and Chen, {Yu Min} and Tien-Sheng Chao and Liu, {Don Gey} and Lei, {Tan Fu}",

year = "2000",

month = jun,

day = "15",

doi = "10.1143/JJAP.39.L562",

language = "English",

volume = "39",

pages = "L562--L563",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "6 B",

}

TY - JOUR

T1 - Improvement of polysilicon oxide integrity using NF3-annealing

AU - Yang, Wen Luh

AU - Shieh, Ming Sun

AU - Chen, Yu Min

AU - Chao, Tien-Sheng

AU - Liu, Don Gey

AU - Lei, Tan Fu

PY - 2000/6/15

Y1 - 2000/6/15

N2 - A new method that uses NF3-annealing improves the polysilicon oxide integrity. By using optimized NF3 flow-rate, the method provides the advantages of both N and F simultaneously by incorporating stronger Si-N and Si-F bonds at the polysilicon/polyoxide interface. Significant improvements in terms of roughness, breakdown strength, charge-to-breakdown, and stress-induced leakage current have been demonstrated.

AB - A new method that uses NF3-annealing improves the polysilicon oxide integrity. By using optimized NF3 flow-rate, the method provides the advantages of both N and F simultaneously by incorporating stronger Si-N and Si-F bonds at the polysilicon/polyoxide interface. Significant improvements in terms of roughness, breakdown strength, charge-to-breakdown, and stress-induced leakage current have been demonstrated.

UR - http://www.scopus.com/inward/record.url?scp=0034205070&partnerID=8YFLogxK

U2 - 10.1143/JJAP.39.L562

DO - 10.1143/JJAP.39.L562

M3 - Article

AN - SCOPUS:0034205070

SN - 0021-4922

VL - 39

SP - L562-L563

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 6 B

ER -

Improvement of polysilicon oxide integrity using NF₃-annealing

Abstract

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