Improvement of polysilicon oxide by growing on polished polysilicon film

Tan Fu Lei; Juing Yi Cheng; Shyh Yin Shiau; Tien-Sheng Chao; Chao Sung Lai

doi:10.1109/55.585353

Improvement of polysilicon oxide by growing on polished polysilicon film

Tan Fu Lei^*, Juing Yi Cheng, Shyh Yin Shiau, Tien-Sheng Chao, Chao Sung Lai

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

This letter first reports the characteristics of polyoxide that was thermally grown on polished polysilicon film. Compared to conventional polyoxide, polyoxide grown on polished polysilicon film exhibits lower leakage current, higher dielectric breakdown field, larger effective barrier height, and higher charge-to-breakdown. This simple and well-operated process provides a very promising option for the interpolysilicon oxide.

Original language	English
Pages (from-to)	270-271
Number of pages	2
Journal	Ieee Electron Device Letters
Volume	18
Issue number	6
DOIs	https://doi.org/10.1109/55.585353
State	Published - Jun 1997

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title = "Improvement of polysilicon oxide by growing on polished polysilicon film",

abstract = "This letter first reports the characteristics of polyoxide that was thermally grown on polished polysilicon film. Compared to conventional polyoxide, polyoxide grown on polished polysilicon film exhibits lower leakage current, higher dielectric breakdown field, larger effective barrier height, and higher charge-to-breakdown. This simple and well-operated process provides a very promising option for the interpolysilicon oxide.",

author = "Lei, {Tan Fu} and Cheng, {Juing Yi} and Shiau, {Shyh Yin} and Tien-Sheng Chao and Lai, {Chao Sung}",

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AU - Lei, Tan Fu

AU - Cheng, Juing Yi

AU - Shiau, Shyh Yin

AU - Chao, Tien-Sheng

AU - Lai, Chao Sung

PY - 1997/6

Y1 - 1997/6

N2 - This letter first reports the characteristics of polyoxide that was thermally grown on polished polysilicon film. Compared to conventional polyoxide, polyoxide grown on polished polysilicon film exhibits lower leakage current, higher dielectric breakdown field, larger effective barrier height, and higher charge-to-breakdown. This simple and well-operated process provides a very promising option for the interpolysilicon oxide.

AB - This letter first reports the characteristics of polyoxide that was thermally grown on polished polysilicon film. Compared to conventional polyoxide, polyoxide grown on polished polysilicon film exhibits lower leakage current, higher dielectric breakdown field, larger effective barrier height, and higher charge-to-breakdown. This simple and well-operated process provides a very promising option for the interpolysilicon oxide.

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JO - Ieee Electron Device Letters

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Improvement of polysilicon oxide by growing on polished polysilicon film

Abstract

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