Improvement of near-ultraviolet nitride-based light emitting diodes with mesh indium tin oxide contact layers

Cheng-Huang Kuo; C. M. Chen; C. W. Kuo; C. J. Tun; C. J. Pan; B. J. Pong; G. C. Chi

doi:10.1063/1.2387941

Improvement of near-ultraviolet nitride-based light emitting diodes with mesh indium tin oxide contact layers

Cheng-Huang Kuo^*, C. M. Chen, C. W. Kuo, C. J. Tun, C. J. Pan, B. J. Pong, G. C. Chi

^*Corresponding author for this work

Institute of Lighting and Energy Photonics

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

The authors have demonstrated nitride-based near-ultraviolet (NUV) light emitting diodes (LEDs) with mesh indium tin oxide (ITO) contact layer. With 20 mA injection current, it was found that forward voltages were 3.94 and 4.05 V while the output powers were 7.54 and 9.02 mW for the planar ITO LED and mesh ITO LED, respectively. The larger LED output power should be attributed partially to the reduced absorption of ITO in the NUV region and partially to the better current spreading.

Original language	English
Article number	201104
Journal	Applied Physics Letters
Volume	89
Issue number	20
DOIs	https://doi.org/10.1063/1.2387941
State	Published - 2006

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title = "Improvement of near-ultraviolet nitride-based light emitting diodes with mesh indium tin oxide contact layers",

abstract = "The authors have demonstrated nitride-based near-ultraviolet (NUV) light emitting diodes (LEDs) with mesh indium tin oxide (ITO) contact layer. With 20 mA injection current, it was found that forward voltages were 3.94 and 4.05 V while the output powers were 7.54 and 9.02 mW for the planar ITO LED and mesh ITO LED, respectively. The larger LED output power should be attributed partially to the reduced absorption of ITO in the NUV region and partially to the better current spreading.",

author = "Cheng-Huang Kuo and Chen, {C. M.} and Kuo, {C. W.} and Tun, {C. J.} and Pan, {C. J.} and Pong, {B. J.} and Chi, {G. C.}",

year = "2006",

doi = "10.1063/1.2387941",

language = "English",

volume = "89",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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T1 - Improvement of near-ultraviolet nitride-based light emitting diodes with mesh indium tin oxide contact layers

AU - Kuo, Cheng-Huang

AU - Chen, C. M.

AU - Kuo, C. W.

AU - Tun, C. J.

AU - Pan, C. J.

AU - Pong, B. J.

AU - Chi, G. C.

PY - 2006

Y1 - 2006

N2 - The authors have demonstrated nitride-based near-ultraviolet (NUV) light emitting diodes (LEDs) with mesh indium tin oxide (ITO) contact layer. With 20 mA injection current, it was found that forward voltages were 3.94 and 4.05 V while the output powers were 7.54 and 9.02 mW for the planar ITO LED and mesh ITO LED, respectively. The larger LED output power should be attributed partially to the reduced absorption of ITO in the NUV region and partially to the better current spreading.

AB - The authors have demonstrated nitride-based near-ultraviolet (NUV) light emitting diodes (LEDs) with mesh indium tin oxide (ITO) contact layer. With 20 mA injection current, it was found that forward voltages were 3.94 and 4.05 V while the output powers were 7.54 and 9.02 mW for the planar ITO LED and mesh ITO LED, respectively. The larger LED output power should be attributed partially to the reduced absorption of ITO in the NUV region and partially to the better current spreading.

UR - http://www.scopus.com/inward/record.url?scp=33751074408&partnerID=8YFLogxK

U2 - 10.1063/1.2387941

DO - 10.1063/1.2387941

M3 - Article

AN - SCOPUS:33751074408

SN - 0003-6951

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 20

M1 - 201104

ER -

Improvement of near-ultraviolet nitride-based light emitting diodes with mesh indium tin oxide contact layers

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