Improvement of low-temperature gate dielectric formed in N 2 O plasma by an additional CF 4 pretreatment process

Tzu Yun Chang; Tan Fu Lei; Tien-Sheng Chao; Huang Chun Wen; Hsiao Wei Chen

doi:10.1109/LED.2002.1015208

Improvement of low-temperature gate dielectric formed in N ₂ O plasma by an additional CF ₄ pretreatment process

Tzu Yun Chang^*, Tan Fu Lei, Tien-Sheng Chao, Huang Chun Wen, Hsiao Wei Chen

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

This study describes a novel technique to form low temperature oxide (<350°C). Low-temperature oxides were formed by N ₂ O plasma in the plasma-enhanced chemical vapor deposition (PECVD) system with a CF ₄ pretreatment. These oxides demonstrate excellent current-voltage (I-V) characteristics comparable to thermally grown oxides. Experimental results indicate that CF ₄ plasma treatment can significantly improve the reliability of low-temperature oxides. With excellent electrical properties, the technique is highly promising for low-temperature processes.

Original language	English
Pages (from-to)	389-391
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	23
Issue number	7
DOIs	https://doi.org/10.1109/LED.2002.1015208
State	Published - 1 Jul 2002

Keywords

Low-temperature oxide
Metal gate
N O/CF plasma
TDDB and GOI

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10.1109/LED.2002.1015208

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title = "Improvement of low-temperature gate dielectric formed in N 2 O plasma by an additional CF 4 pretreatment process",

abstract = " This study describes a novel technique to form low temperature oxide (<350°C). Low-temperature oxides were formed by N 2 O plasma in the plasma-enhanced chemical vapor deposition (PECVD) system with a CF 4 pretreatment. These oxides demonstrate excellent current-voltage (I-V) characteristics comparable to thermally grown oxides. Experimental results indicate that CF 4 plasma treatment can significantly improve the reliability of low-temperature oxides. With excellent electrical properties, the technique is highly promising for low-temperature processes. ",

keywords = "Low-temperature oxide, Metal gate, N O/CF plasma, TDDB and GOI",

author = "Chang, {Tzu Yun} and Lei, {Tan Fu} and Tien-Sheng Chao and Wen, {Huang Chun} and Chen, {Hsiao Wei}",

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T1 - Improvement of low-temperature gate dielectric formed in N 2 O plasma by an additional CF 4 pretreatment process

AU - Chang, Tzu Yun

AU - Lei, Tan Fu

AU - Chao, Tien-Sheng

AU - Wen, Huang Chun

AU - Chen, Hsiao Wei

PY - 2002/7/1

Y1 - 2002/7/1

N2 - This study describes a novel technique to form low temperature oxide (<350°C). Low-temperature oxides were formed by N 2 O plasma in the plasma-enhanced chemical vapor deposition (PECVD) system with a CF 4 pretreatment. These oxides demonstrate excellent current-voltage (I-V) characteristics comparable to thermally grown oxides. Experimental results indicate that CF 4 plasma treatment can significantly improve the reliability of low-temperature oxides. With excellent electrical properties, the technique is highly promising for low-temperature processes.

AB - This study describes a novel technique to form low temperature oxide (<350°C). Low-temperature oxides were formed by N 2 O plasma in the plasma-enhanced chemical vapor deposition (PECVD) system with a CF 4 pretreatment. These oxides demonstrate excellent current-voltage (I-V) characteristics comparable to thermally grown oxides. Experimental results indicate that CF 4 plasma treatment can significantly improve the reliability of low-temperature oxides. With excellent electrical properties, the technique is highly promising for low-temperature processes.

KW - Low-temperature oxide

KW - Metal gate

KW - N O/CF plasma

KW - TDDB and GOI

UR - http://www.scopus.com/inward/record.url?scp=0036645822&partnerID=8YFLogxK

U2 - 10.1109/LED.2002.1015208

DO - 10.1109/LED.2002.1015208

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VL - 23

SP - 389

EP - 391

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 7

ER -

Improvement of low-temperature gate dielectric formed in N ₂ O plasma by an additional CF ₄ pretreatment process

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Keywords

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