This study describes a novel technique to form low temperature oxide (<350°C). Low-temperature oxides were formed by N 2 O plasma in the plasma-enhanced chemical vapor deposition (PECVD) system with a CF 4 pretreatment. These oxides demonstrate excellent current-voltage (I-V) characteristics comparable to thermally grown oxides. Experimental results indicate that CF 4 plasma treatment can significantly improve the reliability of low-temperature oxides. With excellent electrical properties, the technique is highly promising for low-temperature processes.
|Number of pages||3|
|Journal||IEEE Electron Device Letters|
|State||Published - 1 Jul 2002|
- Low-temperature oxide
- Metal gate
- N O/CF plasma
- TDDB and GOI