Improvement of low dielectric constant methylsilsesquioxane by boron implantation treatment

T. C. Chang; Y. S. Mor; Po-Tsun Liu; T. M. Tsai; C. W. Chen; S. M. Sze; Y. J. Mei

doi:10.1016/S0040-6090(01)01331-1

Improvement of low dielectric constant methylsilsesquioxane by boron implantation treatment

T. C. Chang, Y. S. Mor, Po-Tsun Liu, T. M. Tsai, C. W. Chen, S. M. Sze, Y. J. Mei

Department of Photonics

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

The organic silsesquioxane, methylsilsesquioxane (MSQ), exhibits a low dielectric constant because of its lower film density compared with thermal oxide. In this study, boron implantation treatment is investigated in order to improve the quality of MSQ. The small size of boron atoms do not damage the chemical bonding of the MSQ film. In addition, the formation of densified surfaces after boron implantation can reduce the probability of moisture uptake into the MSQ. Therefore, the leakage current of MSQ film is significantly decreased and the low-k properties of MSQ film can be maintained.

Original language	English
Pages (from-to)	637-640
Number of pages	4
Journal	Thin Solid Films
Volume	398
Issue number	399
DOIs	https://doi.org/10.1016/S0040-6090(01)01331-1
State	Published - Nov 2001

Keywords

Boron implantation
Dielectric constant
Methylsilsesquioxane

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10.1016/S0040-6090(01)01331-1

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@article{9ceeaa752dfe4e36bac38b528b941d7e,

title = "Improvement of low dielectric constant methylsilsesquioxane by boron implantation treatment",

abstract = "The organic silsesquioxane, methylsilsesquioxane (MSQ), exhibits a low dielectric constant because of its lower film density compared with thermal oxide. In this study, boron implantation treatment is investigated in order to improve the quality of MSQ. The small size of boron atoms do not damage the chemical bonding of the MSQ film. In addition, the formation of densified surfaces after boron implantation can reduce the probability of moisture uptake into the MSQ. Therefore, the leakage current of MSQ film is significantly decreased and the low-k properties of MSQ film can be maintained.",

keywords = "Boron implantation, Dielectric constant, Methylsilsesquioxane",

author = "Chang, {T. C.} and Mor, {Y. S.} and Po-Tsun Liu and Tsai, {T. M.} and Chen, {C. W.} and Sze, {S. M.} and Mei, {Y. J.}",

year = "2001",

month = nov,

doi = "10.1016/S0040-6090(01)01331-1",

language = "English",

volume = "398",

pages = "637--640",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "399",

}

TY - JOUR

T1 - Improvement of low dielectric constant methylsilsesquioxane by boron implantation treatment

AU - Chang, T. C.

AU - Mor, Y. S.

AU - Liu, Po-Tsun

AU - Tsai, T. M.

AU - Chen, C. W.

AU - Sze, S. M.

AU - Mei, Y. J.

PY - 2001/11

Y1 - 2001/11

N2 - The organic silsesquioxane, methylsilsesquioxane (MSQ), exhibits a low dielectric constant because of its lower film density compared with thermal oxide. In this study, boron implantation treatment is investigated in order to improve the quality of MSQ. The small size of boron atoms do not damage the chemical bonding of the MSQ film. In addition, the formation of densified surfaces after boron implantation can reduce the probability of moisture uptake into the MSQ. Therefore, the leakage current of MSQ film is significantly decreased and the low-k properties of MSQ film can be maintained.

AB - The organic silsesquioxane, methylsilsesquioxane (MSQ), exhibits a low dielectric constant because of its lower film density compared with thermal oxide. In this study, boron implantation treatment is investigated in order to improve the quality of MSQ. The small size of boron atoms do not damage the chemical bonding of the MSQ film. In addition, the formation of densified surfaces after boron implantation can reduce the probability of moisture uptake into the MSQ. Therefore, the leakage current of MSQ film is significantly decreased and the low-k properties of MSQ film can be maintained.

KW - Boron implantation

KW - Dielectric constant

KW - Methylsilsesquioxane

UR - http://www.scopus.com/inward/record.url?scp=0035507134&partnerID=8YFLogxK

U2 - 10.1016/S0040-6090(01)01331-1

DO - 10.1016/S0040-6090(01)01331-1

M3 - Article

AN - SCOPUS:0035507134

SN - 0040-6090

VL - 398

SP - 637

EP - 640

JO - Thin Solid Films

JF - Thin Solid Films

IS - 399

ER -

Improvement of low dielectric constant methylsilsesquioxane by boron implantation treatment

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Keywords

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