Improvement of kink characteristic of proton implanted VCSEL with ITO overcoating

Fang I. Lai; Ya Hsien Chang; Li-Hong; Laih; Hao-Chung Kuo; S. C. Wang

doi:10.1117/12.530023

Improvement of kink characteristic of proton implanted VCSEL with ITO overcoating

Fang I. Lai^*, Ya Hsien Chang, Li-Hong, Laih, Hao-Chung Kuo, S. C. Wang

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Conference article › peer-review

3 Scopus citations

Abstract

Proton implanted VCSEL has been demonstrated with good reliability and decent modulation speed up to 1.25 Gb/s. However, kinks in current vs light output (L-I) has been always an issue in the gain-guided proton implant VCSEL. The kink related jitter and noise performance made it difficult to meet 2.5 Gb/s (OC-48) requirement. The kinks in L-I curve can be attributed to non-uniform carrier distribution induced non-uniform gain distribution within emission area. In this paper, the effects of a Ti/ITO transparent over-coating on the proton-implanted AlGaAs/GaAs VCSELs (15um diameter aperture) are investigated. The kinks distribution in L-I characteristics from a 2 inch wafer is greatly improved compared to conventional process. These VCSELs exhibit nearly kink-free L-I output performance with threshold currents ∼3 mA, and the slope efficiencies ∼ 0.25 W/A. The near-field emission patterns suggest the Ti/ITO over-coating facilitates the current spreading and uniform carrier distribution of the top VCSEL contact thus enhancing the laser performance. Finally, we performed high speed modulation measurement. The eye diagram of proton-implanted VCSELs with Ti/ITO transparent over-coating operating at 2.125 Gb/s with 10mA bias and 9dB extinction ratio shows very clean eye with jitter less than 35 ps.

Original language	English
Pages (from-to)	213-220
Number of pages	8
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	5364
DOIs	https://doi.org/10.1117/12.530023
State	Published - 16 Aug 2004
Event	Vertical-Cavity Surface-Emitting lasers VIII - San Jose, CA, United States Duration: 28 Jan 2004 → 29 Jan 2004

Keywords

High-speed operation
ITO
Kink
Kink improvement
Proton implant
Uniform carrier distribution
VCSEL

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@article{b83e0c0a0e1847bbba1c773829519563,

title = "Improvement of kink characteristic of proton implanted VCSEL with ITO overcoating",

abstract = "Proton implanted VCSEL has been demonstrated with good reliability and decent modulation speed up to 1.25 Gb/s. However, kinks in current vs light output (L-I) has been always an issue in the gain-guided proton implant VCSEL. The kink related jitter and noise performance made it difficult to meet 2.5 Gb/s (OC-48) requirement. The kinks in L-I curve can be attributed to non-uniform carrier distribution induced non-uniform gain distribution within emission area. In this paper, the effects of a Ti/ITO transparent over-coating on the proton-implanted AlGaAs/GaAs VCSELs (15um diameter aperture) are investigated. The kinks distribution in L-I characteristics from a 2 inch wafer is greatly improved compared to conventional process. These VCSELs exhibit nearly kink-free L-I output performance with threshold currents ∼3 mA, and the slope efficiencies ∼ 0.25 W/A. The near-field emission patterns suggest the Ti/ITO over-coating facilitates the current spreading and uniform carrier distribution of the top VCSEL contact thus enhancing the laser performance. Finally, we performed high speed modulation measurement. The eye diagram of proton-implanted VCSELs with Ti/ITO transparent over-coating operating at 2.125 Gb/s with 10mA bias and 9dB extinction ratio shows very clean eye with jitter less than 35 ps.",

keywords = "High-speed operation, ITO, Kink, Kink improvement, Proton implant, Uniform carrier distribution, VCSEL",

author = "Lai, {Fang I.} and Chang, {Ya Hsien} and Li-Hong and Laih and Hao-Chung Kuo and Wang, {S. C.}",

year = "2004",

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doi = "10.1117/12.530023",

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volume = "5364",

pages = "213--220",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

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note = "Vertical-Cavity Surface-Emitting lasers VIII ; Conference date: 28-01-2004 Through 29-01-2004",

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TY - JOUR

T1 - Improvement of kink characteristic of proton implanted VCSEL with ITO overcoating

AU - Lai, Fang I.

AU - Chang, Ya Hsien

AU - Li-Hong,

AU - Laih,

AU - Kuo, Hao-Chung

AU - Wang, S. C.

PY - 2004/8/16

Y1 - 2004/8/16

N2 - Proton implanted VCSEL has been demonstrated with good reliability and decent modulation speed up to 1.25 Gb/s. However, kinks in current vs light output (L-I) has been always an issue in the gain-guided proton implant VCSEL. The kink related jitter and noise performance made it difficult to meet 2.5 Gb/s (OC-48) requirement. The kinks in L-I curve can be attributed to non-uniform carrier distribution induced non-uniform gain distribution within emission area. In this paper, the effects of a Ti/ITO transparent over-coating on the proton-implanted AlGaAs/GaAs VCSELs (15um diameter aperture) are investigated. The kinks distribution in L-I characteristics from a 2 inch wafer is greatly improved compared to conventional process. These VCSELs exhibit nearly kink-free L-I output performance with threshold currents ∼3 mA, and the slope efficiencies ∼ 0.25 W/A. The near-field emission patterns suggest the Ti/ITO over-coating facilitates the current spreading and uniform carrier distribution of the top VCSEL contact thus enhancing the laser performance. Finally, we performed high speed modulation measurement. The eye diagram of proton-implanted VCSELs with Ti/ITO transparent over-coating operating at 2.125 Gb/s with 10mA bias and 9dB extinction ratio shows very clean eye with jitter less than 35 ps.

AB - Proton implanted VCSEL has been demonstrated with good reliability and decent modulation speed up to 1.25 Gb/s. However, kinks in current vs light output (L-I) has been always an issue in the gain-guided proton implant VCSEL. The kink related jitter and noise performance made it difficult to meet 2.5 Gb/s (OC-48) requirement. The kinks in L-I curve can be attributed to non-uniform carrier distribution induced non-uniform gain distribution within emission area. In this paper, the effects of a Ti/ITO transparent over-coating on the proton-implanted AlGaAs/GaAs VCSELs (15um diameter aperture) are investigated. The kinks distribution in L-I characteristics from a 2 inch wafer is greatly improved compared to conventional process. These VCSELs exhibit nearly kink-free L-I output performance with threshold currents ∼3 mA, and the slope efficiencies ∼ 0.25 W/A. The near-field emission patterns suggest the Ti/ITO over-coating facilitates the current spreading and uniform carrier distribution of the top VCSEL contact thus enhancing the laser performance. Finally, we performed high speed modulation measurement. The eye diagram of proton-implanted VCSELs with Ti/ITO transparent over-coating operating at 2.125 Gb/s with 10mA bias and 9dB extinction ratio shows very clean eye with jitter less than 35 ps.

KW - High-speed operation

KW - ITO

KW - Kink

KW - Kink improvement

KW - Proton implant

KW - Uniform carrier distribution

KW - VCSEL

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DO - 10.1117/12.530023

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AN - SCOPUS:3543051737

SN - 0277-786X

VL - 5364

SP - 213

EP - 220

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Vertical-Cavity Surface-Emitting lasers VIII

Y2 - 28 January 2004 through 29 January 2004

ER -

Improvement of kink characteristic of proton implanted VCSEL with ITO overcoating

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Keywords

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