Improvement of junction leakage of nickel silicided junction by a Ti-capping layer

Tuo-Hung Hou; Tan Fu Lei; Tien-Sheng Chao

doi:10.1109/55.798047

Improvement of junction leakage of nickel silicided junction by a Ti-capping layer

Tuo-Hung Hou, Tan Fu Lei, Tien-Sheng Chao

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Abstract

A novel NiSi process with a thin Ti-cap layer is proposed, for the first time, to improve the leakage problem of Ni-silicided junction. The Ti-cap samples exhibit a very low leakage current density about 1×10^-9 A/cm² after 600 °C annealing, which is one order of magnitude reduction comparing with uncapped samples. From Auger analyzes, it is found that this significant improvement results from suppression of the oxidation of the Ni-silicide during the thermal annealing process.

Original language	English
Pages (from-to)	572-573
Number of pages	2
Journal	Ieee Electron Device Letters
Volume	20
Issue number	11
DOIs	https://doi.org/10.1109/55.798047
State	Published - Nov 1999

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title = "Improvement of junction leakage of nickel silicided junction by a Ti-capping layer",

abstract = "A novel NiSi process with a thin Ti-cap layer is proposed, for the first time, to improve the leakage problem of Ni-silicided junction. The Ti-cap samples exhibit a very low leakage current density about 1×10-9 A/cm2 after 600 °C annealing, which is one order of magnitude reduction comparing with uncapped samples. From Auger analyzes, it is found that this significant improvement results from suppression of the oxidation of the Ni-silicide during the thermal annealing process.",

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N2 - A novel NiSi process with a thin Ti-cap layer is proposed, for the first time, to improve the leakage problem of Ni-silicided junction. The Ti-cap samples exhibit a very low leakage current density about 1×10-9 A/cm2 after 600 °C annealing, which is one order of magnitude reduction comparing with uncapped samples. From Auger analyzes, it is found that this significant improvement results from suppression of the oxidation of the Ni-silicide during the thermal annealing process.

AB - A novel NiSi process with a thin Ti-cap layer is proposed, for the first time, to improve the leakage problem of Ni-silicided junction. The Ti-cap samples exhibit a very low leakage current density about 1×10-9 A/cm2 after 600 °C annealing, which is one order of magnitude reduction comparing with uncapped samples. From Auger analyzes, it is found that this significant improvement results from suppression of the oxidation of the Ni-silicide during the thermal annealing process.

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Improvement of junction leakage of nickel silicided junction by a Ti-capping layer

Abstract

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