Improvement of high speed performance for 10-Gb/s 850-nm VCSELs using InGaAsP/InGaP strain-compensated MQWs

Y. S. Chang; Hao-Chung Kuo; F. I. Lai; Y. A. Chang; L. H. Laih; S. C. Wang

doi:10.1117/12.530055

Improvement of high speed performance for 10-Gb/s 850-nm VCSELs using InGaAsP/InGaP strain-compensated MQWs

Y. S. Chang, Hao-Chung Kuo, F. I. Lai, Y. A. Chang, L. H. Laih, S. C. Wang^*

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Conference article › peer-review

9 Scopus citations

Abstract

We present in this paper the MOCVD growth and characterization of high performance 850nm InGaAsP/InGaP strain-compensated MQWs vertical-cavity surface-emitting lasers (VCSELs). These VCSELs exhibit superior characteristics, with threshold currents ∼0.4 mA, and slope efficiencies ∼ 0.6 mW/mA. The threshold current change is less than 0.2 mA and the slope efficiency drops by less than ∼30% when the substrate temperature is raised from room temperature to 85°C. These VCSELs also demonstrate high speed modulation bandwidth up to 12.5Gbit/s from 25°C to 85°C.

Original language	English
Pages (from-to)	221-226
Number of pages	6
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	5364
DOIs	https://doi.org/10.1117/12.530055
State	Published - 2004
Event	Vertical-Cavity Surface-Emitting lasers VIII - San Jose, CA, United States Duration: 28 Jan 2004 → 29 Jan 2004

Keywords

High speed
InGaAsP
MOCVD
Strain-compensated
VCSELs

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10.1117/12.530055

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@article{bb773bd0591645fc8811ec775b991729,

title = "Improvement of high speed performance for 10-Gb/s 850-nm VCSELs using InGaAsP/InGaP strain-compensated MQWs",

abstract = "We present in this paper the MOCVD growth and characterization of high performance 850nm InGaAsP/InGaP strain-compensated MQWs vertical-cavity surface-emitting lasers (VCSELs). These VCSELs exhibit superior characteristics, with threshold currents ∼0.4 mA, and slope efficiencies ∼ 0.6 mW/mA. The threshold current change is less than 0.2 mA and the slope efficiency drops by less than ∼30% when the substrate temperature is raised from room temperature to 85°C. These VCSELs also demonstrate high speed modulation bandwidth up to 12.5Gbit/s from 25°C to 85°C.",

keywords = "High speed, InGaAsP, MOCVD, Strain-compensated, VCSELs",

author = "Chang, {Y. S.} and Hao-Chung Kuo and Lai, {F. I.} and Chang, {Y. A.} and Laih, {L. H.} and Wang, {S. C.}",

year = "2004",

doi = "10.1117/12.530055",

language = "English",

volume = "5364",

pages = "221--226",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Vertical-Cavity Surface-Emitting lasers VIII ; Conference date: 28-01-2004 Through 29-01-2004",

}

TY - JOUR

T1 - Improvement of high speed performance for 10-Gb/s 850-nm VCSELs using InGaAsP/InGaP strain-compensated MQWs

AU - Chang, Y. S.

AU - Kuo, Hao-Chung

AU - Lai, F. I.

AU - Chang, Y. A.

AU - Laih, L. H.

AU - Wang, S. C.

PY - 2004

Y1 - 2004

N2 - We present in this paper the MOCVD growth and characterization of high performance 850nm InGaAsP/InGaP strain-compensated MQWs vertical-cavity surface-emitting lasers (VCSELs). These VCSELs exhibit superior characteristics, with threshold currents ∼0.4 mA, and slope efficiencies ∼ 0.6 mW/mA. The threshold current change is less than 0.2 mA and the slope efficiency drops by less than ∼30% when the substrate temperature is raised from room temperature to 85°C. These VCSELs also demonstrate high speed modulation bandwidth up to 12.5Gbit/s from 25°C to 85°C.

AB - We present in this paper the MOCVD growth and characterization of high performance 850nm InGaAsP/InGaP strain-compensated MQWs vertical-cavity surface-emitting lasers (VCSELs). These VCSELs exhibit superior characteristics, with threshold currents ∼0.4 mA, and slope efficiencies ∼ 0.6 mW/mA. The threshold current change is less than 0.2 mA and the slope efficiency drops by less than ∼30% when the substrate temperature is raised from room temperature to 85°C. These VCSELs also demonstrate high speed modulation bandwidth up to 12.5Gbit/s from 25°C to 85°C.

KW - High speed

KW - InGaAsP

KW - MOCVD

KW - Strain-compensated

KW - VCSELs

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U2 - 10.1117/12.530055

DO - 10.1117/12.530055

M3 - Conference article

AN - SCOPUS:3543112557

SN - 0277-786X

VL - 5364

SP - 221

EP - 226

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Vertical-Cavity Surface-Emitting lasers VIII

Y2 - 28 January 2004 through 29 January 2004

ER -

Improvement of high speed performance for 10-Gb/s 850-nm VCSELs using InGaAsP/InGaP strain-compensated MQWs

Abstract

Keywords

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