Improvement of high-speed oxide-confined vertical-cavity surface-emitting lasers

Hsin-Chieh Yu; Shoou Jinn Chang; Yan Kuin Su; Chia Pin Sung; Hong Pin Yang; Chun Yuan Huang; Yu Wei Lin; Jin Mei Wang; Fang I. Lai; Hao-Chung Kuo

doi:10.1143/JJAP.43.1947

Improvement of high-speed oxide-confined vertical-cavity surface-emitting lasers

Hsin-Chieh Yu^*, Shoou Jinn Chang, Yan Kuin Su, Chia Pin Sung, Hong Pin Yang, Chun Yuan Huang, Yu Wei Lin, Jin Mei Wang, Fang I. Lai, Hao-Chung Kuo

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

High-speed vertical-cavity surface-emitting lasers that could be modulated up to 10 Giga-bit-per-second (Gbps) were accomplished by using additional proton implantation to reduce the parasitic capacitance. The eye diagram of the implanted device shows a noticeable improvement when compared with those devices without implantation. In contrast to previous reports, moreover, the output power-current-voltage (L-I-V) characteristics of the fabricated devices in this study show excellent consistency between before and after implantation. The high-temperature lifetime of devices fabricated with a similar process has already exceeded 8100 h up to the present day.

Original language	English
Pages (from-to)	1947-1950
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	43
Issue number	4 B
DOIs	https://doi.org/10.1143/JJAP.43.1947
State	Published - Apr 2004

Keywords

Eye diagram
High-speed
Oxide-confined
Proton implantation
VCSEL

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10.1143/JJAP.43.1947

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title = "Improvement of high-speed oxide-confined vertical-cavity surface-emitting lasers",

abstract = "High-speed vertical-cavity surface-emitting lasers that could be modulated up to 10 Giga-bit-per-second (Gbps) were accomplished by using additional proton implantation to reduce the parasitic capacitance. The eye diagram of the implanted device shows a noticeable improvement when compared with those devices without implantation. In contrast to previous reports, moreover, the output power-current-voltage (L-I-V) characteristics of the fabricated devices in this study show excellent consistency between before and after implantation. The high-temperature lifetime of devices fabricated with a similar process has already exceeded 8100 h up to the present day.",

keywords = "Eye diagram, High-speed, Oxide-confined, Proton implantation, VCSEL",

author = "Hsin-Chieh Yu and Chang, {Shoou Jinn} and Su, {Yan Kuin} and Sung, {Chia Pin} and Yang, {Hong Pin} and Huang, {Chun Yuan} and Lin, {Yu Wei} and Wang, {Jin Mei} and Lai, {Fang I.} and Hao-Chung Kuo",

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AU - Yu, Hsin-Chieh

AU - Chang, Shoou Jinn

AU - Su, Yan Kuin

AU - Sung, Chia Pin

AU - Yang, Hong Pin

AU - Huang, Chun Yuan

AU - Lin, Yu Wei

AU - Wang, Jin Mei

AU - Lai, Fang I.

AU - Kuo, Hao-Chung

PY - 2004/4

Y1 - 2004/4

N2 - High-speed vertical-cavity surface-emitting lasers that could be modulated up to 10 Giga-bit-per-second (Gbps) were accomplished by using additional proton implantation to reduce the parasitic capacitance. The eye diagram of the implanted device shows a noticeable improvement when compared with those devices without implantation. In contrast to previous reports, moreover, the output power-current-voltage (L-I-V) characteristics of the fabricated devices in this study show excellent consistency between before and after implantation. The high-temperature lifetime of devices fabricated with a similar process has already exceeded 8100 h up to the present day.

AB - High-speed vertical-cavity surface-emitting lasers that could be modulated up to 10 Giga-bit-per-second (Gbps) were accomplished by using additional proton implantation to reduce the parasitic capacitance. The eye diagram of the implanted device shows a noticeable improvement when compared with those devices without implantation. In contrast to previous reports, moreover, the output power-current-voltage (L-I-V) characteristics of the fabricated devices in this study show excellent consistency between before and after implantation. The high-temperature lifetime of devices fabricated with a similar process has already exceeded 8100 h up to the present day.

KW - Eye diagram

KW - High-speed

KW - Oxide-confined

KW - Proton implantation

KW - VCSEL

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U2 - 10.1143/JJAP.43.1947

DO - 10.1143/JJAP.43.1947

M3 - Article

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 4 B

ER -

Improvement of high-speed oxide-confined vertical-cavity surface-emitting lasers

Abstract

Keywords

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