Improvement of epitaxy gan quality using liquid-phase deposited nano-patterned sapphire substrates

Cheng Yu Hsieh*, Bo Wen Lin, Hsin Ju Cho, Bau Ming Wang, Nancy Chang, Yew-Chuhg Wu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

A relatively simple and easy and inexpensive liquid-phase deposition (LPD) method is employed to introduce nanoscale silica hemispheres on sapphire substrates for fabricating a nano-patterned sapphire substrate (NPSS). Compared with GaN grown on sapphire without any pattern, the NPSS-GaN film is of much better quality as observed by scanning electron microscopy, transmission electron-microscopy, X-ray diffraction, cathodoluminescence, and photoluminescence. This is because GaN is initiated from the c-plane instead of the LPD-silica surface. In addition, many dislocations within the NPSS-GaN bend toward the patterns, or end at the GaN/void interfaces.

Original languageEnglish
Article number6330988
Pages (from-to)2232-2234
Number of pages3
JournalIEEE Photonics Technology Letters
Volume24
Issue number24
DOIs
StatePublished - 10 Dec 2012

Keywords

  • Light-emitting diode (LED)
  • nano pattern
  • sapphire

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