Improvement of charge programming and retention by NH3 plasma treatment on tunnel oxide for SiO2/SixGe 1-x/SiO2 tri-layer memory devices

Kung Ming Fan; Chao Sung Lai; Yu China Fang; Chi Fong Ai; C. R. Chen

doi:10.1109/ISDRS.2007.4422365

Improvement of charge programming and retention by NH₃ plasma treatment on tunnel oxide for SiO₂/Si_xGe _1-x/SiO₂ tri-layer memory devices

Kung Ming Fan, Chao Sung Lai, Yu China Fang, Chi Fong Ai, C. R. Chen

Institute of Pioneer Semiconductor Innovation

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Original language	English
Title of host publication	2007 International Semiconductor Device Research Symposium, ISDRS
DOIs	https://doi.org/10.1109/ISDRS.2007.4422365
State	Published - 2007
Event	2007 International Semiconductor Device Research Symposium, ISDRS - College Park, MD, United States Duration: 12 Dec 2007 → 14 Dec 2007

Publication series

Name	2007 International Semiconductor Device Research Symposium, ISDRS

Conference

Conference	2007 International Semiconductor Device Research Symposium, ISDRS
Country/Territory	United States
City	College Park, MD
Period	12/12/07 → 14/12/07

Access to Document

10.1109/ISDRS.2007.4422365

Cite this

Fan, K. M., Lai, C. S., Fang, Y. C., Ai, C. F., & Chen, C. R. (2007). Improvement of charge programming and retention by NH₃ plasma treatment on tunnel oxide for SiO₂/Si_xGe _1-x/SiO₂ tri-layer memory devices. In 2007 International Semiconductor Device Research Symposium, ISDRS Article 4422365 (2007 International Semiconductor Device Research Symposium, ISDRS). https://doi.org/10.1109/ISDRS.2007.4422365

@inproceedings{1e93d34d971a41d4af5e5a1d6bf7e359,

title = "Improvement of charge programming and retention by NH3 plasma treatment on tunnel oxide for SiO2/SixGe 1-x/SiO2 tri-layer memory devices",

author = "Fan, {Kung Ming} and Lai, {Chao Sung} and Fang, {Yu China} and Ai, {Chi Fong} and Chen, {C. R.}",

year = "2007",

doi = "10.1109/ISDRS.2007.4422365",

language = "English",

isbn = "1424418917",

series = "2007 International Semiconductor Device Research Symposium, ISDRS",

booktitle = "2007 International Semiconductor Device Research Symposium, ISDRS",

note = "2007 International Semiconductor Device Research Symposium, ISDRS ; Conference date: 12-12-2007 Through 14-12-2007",

}

Fan, KM, Lai, CS, Fang, YC, Ai, CF & Chen, CR 2007, Improvement of charge programming and retention by NH₃ plasma treatment on tunnel oxide for SiO₂/Si_xGe _1-x/SiO₂ tri-layer memory devices. in 2007 International Semiconductor Device Research Symposium, ISDRS., 4422365, 2007 International Semiconductor Device Research Symposium, ISDRS, 2007 International Semiconductor Device Research Symposium, ISDRS, College Park, MD, United States, 12/12/07. https://doi.org/10.1109/ISDRS.2007.4422365

Improvement of charge programming and retention by NH₃ plasma treatment on tunnel oxide for SiO₂/Si_xGe _1-x/SiO₂ tri-layer memory devices. / Fan, Kung Ming; Lai, Chao Sung; Fang, Yu China et al.
2007 International Semiconductor Device Research Symposium, ISDRS. 2007. 4422365 (2007 International Semiconductor Device Research Symposium, ISDRS).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Improvement of charge programming and retention by NH3 plasma treatment on tunnel oxide for SiO2/SixGe 1-x/SiO2 tri-layer memory devices

AU - Fan, Kung Ming

AU - Lai, Chao Sung

AU - Fang, Yu China

AU - Ai, Chi Fong

AU - Chen, C. R.

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DO - 10.1109/ISDRS.2007.4422365

M3 - Conference contribution

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SN - 1424418917

SN - 9781424418916

T3 - 2007 International Semiconductor Device Research Symposium, ISDRS

BT - 2007 International Semiconductor Device Research Symposium, ISDRS

T2 - 2007 International Semiconductor Device Research Symposium, ISDRS

Y2 - 12 December 2007 through 14 December 2007