TY - JOUR
T1 - Improvement of AlGaN/GaN HEMT Noise Figure Using Thick Cu Metallization for Satellite Communication Applications
AU - Tseng, Howie
AU - Lin, Yueh Chin
AU - Cheng, Chieh
AU - Chen, Po Wei
AU - Hsu, Heng Tung
AU - Tsao, Yi Fan
AU - Chang, Edward Yi
N1 - Publisher Copyright:
© 2013 IEEE.
PY - 2024
Y1 - 2024
N2 - In this study, AlGaN/GaN high-electron-mobility-transistor (HEMT) with thick Cu metallization is investigated, and the Radio Frequency (RF) performance and the reliability are analyzed. By applying thick Cu metallization of 6.0μm as interconnect, the cut-off frequency (fT), the maximum oscillation frequency (fmax), and the power performance can be improved. Besides, the thick-Cu-metallized device exhibits reduced minimum noise figure (NFmin) of 0.7, 1.0, 2.2 and 2.8 dB at 12, 14, 28 and 38 GHz, respectively, which can be attributed to the reduction of the source and drain resistance caused by thick Cu metallization. Furthermore, for stress test under high drain-to-source voltage (VDS) and high temperature, the proposed device exhibits good stability. The results show that the thick Cu metallization technology has great potential to be applied in satellite communication system.
AB - In this study, AlGaN/GaN high-electron-mobility-transistor (HEMT) with thick Cu metallization is investigated, and the Radio Frequency (RF) performance and the reliability are analyzed. By applying thick Cu metallization of 6.0μm as interconnect, the cut-off frequency (fT), the maximum oscillation frequency (fmax), and the power performance can be improved. Besides, the thick-Cu-metallized device exhibits reduced minimum noise figure (NFmin) of 0.7, 1.0, 2.2 and 2.8 dB at 12, 14, 28 and 38 GHz, respectively, which can be attributed to the reduction of the source and drain resistance caused by thick Cu metallization. Furthermore, for stress test under high drain-to-source voltage (VDS) and high temperature, the proposed device exhibits good stability. The results show that the thick Cu metallization technology has great potential to be applied in satellite communication system.
KW - AlGaN/GaN HEMTs on SiC
KW - Cu metallization
KW - minimum noise figure
UR - http://www.scopus.com/inward/record.url?scp=85188955392&partnerID=8YFLogxK
U2 - 10.1109/JEDS.2024.3381030
DO - 10.1109/JEDS.2024.3381030
M3 - Article
AN - SCOPUS:85188955392
SN - 2168-6734
VL - 12
SP - 268
EP - 274
JO - IEEE Journal of the Electron Devices Society
JF - IEEE Journal of the Electron Devices Society
ER -