Improvement in Integration Issues for Organic Low-k Hybrid-Organic-Siloxane-Polymer

Po-Tsun Liu; Ting Chang Chang; Hsing Su; Yi Shian Mor; Ya Liang Yang; Henry Chung; Jan Hou; Simon M. Sze

doi:10.1149/1.1342184

Improvement in Integration Issues for Organic Low-k Hybrid-Organic-Siloxane-Polymer

Po-Tsun Liu^*, Ting Chang Chang, Hsing Su, Yi Shian Mor, Ya Liang Yang, Henry Chung, Jan Hou, Simon M. Sze

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Article › peer-review

40 Scopus citations

Abstract

The organic low-k hybrid-organic-siloxane-polymcr (HOSP®) has been investigated as an intermetal dielectric. The presence of Si-H and Si-CH₃ bonds instead of partial Si-O bonds lowers the dielectric constant compared to conventional siloxane-based spin-on glass. However, dielectric degradation occurs due to the destruction of functional groups in HOSP during the photoresist ashing process. In this work, we have applied NH₃ plasma nitridation to improve the quality of HOSP films. The NH₃ plasma process converts the organic HOSP surface into an inorganic surface by formation of a thin inert SiN_x passivation layer. The inert layer can enhance the resistance of the HOSP film to moisture uptake and O₂ plasma attack during photoresist stripping. In addition, it effectively prevents copper from penetrating the HOSP film.

Original language	English
Journal	Journal of the Electrochemical Society
Volume	148
Issue number	2
DOIs	https://doi.org/10.1149/1.1342184
State	Published - 1 Dec 2001

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1149/1.1342184

Cite this

@article{05bf8549cb7d479e936ecb58414e9e03,

title = "Improvement in Integration Issues for Organic Low-k Hybrid-Organic-Siloxane-Polymer",

abstract = "The organic low-k hybrid-organic-siloxane-polymcr (HOSP{\textregistered}) has been investigated as an intermetal dielectric. The presence of Si-H and Si-CH3 bonds instead of partial Si-O bonds lowers the dielectric constant compared to conventional siloxane-based spin-on glass. However, dielectric degradation occurs due to the destruction of functional groups in HOSP during the photoresist ashing process. In this work, we have applied NH3 plasma nitridation to improve the quality of HOSP films. The NH3 plasma process converts the organic HOSP surface into an inorganic surface by formation of a thin inert SiNx passivation layer. The inert layer can enhance the resistance of the HOSP film to moisture uptake and O2 plasma attack during photoresist stripping. In addition, it effectively prevents copper from penetrating the HOSP film.",

author = "Po-Tsun Liu and Chang, {Ting Chang} and Hsing Su and Mor, {Yi Shian} and Yang, {Ya Liang} and Henry Chung and Jan Hou and Sze, {Simon M.}",

year = "2001",

month = dec,

day = "1",

doi = "10.1149/1.1342184",

language = "English",

volume = "148",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Institute of Physics",

number = "2",

}

TY - JOUR

T1 - Improvement in Integration Issues for Organic Low-k Hybrid-Organic-Siloxane-Polymer

AU - Liu, Po-Tsun

AU - Chang, Ting Chang

AU - Su, Hsing

AU - Mor, Yi Shian

AU - Yang, Ya Liang

AU - Chung, Henry

AU - Hou, Jan

AU - Sze, Simon M.

PY - 2001/12/1

Y1 - 2001/12/1

N2 - The organic low-k hybrid-organic-siloxane-polymcr (HOSP®) has been investigated as an intermetal dielectric. The presence of Si-H and Si-CH3 bonds instead of partial Si-O bonds lowers the dielectric constant compared to conventional siloxane-based spin-on glass. However, dielectric degradation occurs due to the destruction of functional groups in HOSP during the photoresist ashing process. In this work, we have applied NH3 plasma nitridation to improve the quality of HOSP films. The NH3 plasma process converts the organic HOSP surface into an inorganic surface by formation of a thin inert SiNx passivation layer. The inert layer can enhance the resistance of the HOSP film to moisture uptake and O2 plasma attack during photoresist stripping. In addition, it effectively prevents copper from penetrating the HOSP film.

AB - The organic low-k hybrid-organic-siloxane-polymcr (HOSP®) has been investigated as an intermetal dielectric. The presence of Si-H and Si-CH3 bonds instead of partial Si-O bonds lowers the dielectric constant compared to conventional siloxane-based spin-on glass. However, dielectric degradation occurs due to the destruction of functional groups in HOSP during the photoresist ashing process. In this work, we have applied NH3 plasma nitridation to improve the quality of HOSP films. The NH3 plasma process converts the organic HOSP surface into an inorganic surface by formation of a thin inert SiNx passivation layer. The inert layer can enhance the resistance of the HOSP film to moisture uptake and O2 plasma attack during photoresist stripping. In addition, it effectively prevents copper from penetrating the HOSP film.

UR - http://www.scopus.com/inward/record.url?scp=0001891370&partnerID=8YFLogxK

U2 - 10.1149/1.1342184

DO - 10.1149/1.1342184

M3 - Article

AN - SCOPUS:0001891370

SN - 0013-4651

VL - 148

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 2

ER -

Improvement in Integration Issues for Organic Low-k Hybrid-Organic-Siloxane-Polymer

Abstract

UN SDGs

Access to Document

Other files and links

Fingerprint

Cite this